RRAM News - Page 7

Adesto Technologies announced that DB HiTek (formerly known as Dongbu HiTek) has licensed its RRAM (CBRAM) memory technology. DB HiTek will use Adesto's RRAM as its embedded non-volatile memory for IoT and other ultra-low power customer designs.

DB HiTek is a South Korea based analog and mixed-signal foundry, and it will use Adesto's technology at 180nm. DB HiTek says that Adesto's CBRAM operates at lower voltages, consumes less power and requires fewer processing steps compared to conventional embedded flash technologies.

Israel-based SiOx RRAM developer Weebit Nano announced that it produced a 1Mb array of its silicon-oxide ReRAM at 40nm. The 1Mb initial tests, conducted in CEA/Leti facilities in Grenoble, France, demonstrated the capability of addressing and programming nearly all of the memory cells.

Last month Weebit and Leti extended their co-development agreement. In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technolgoy and business.

Adesto, Shanghai Huali Microelectronics Corporation (HLMC) and Crocus Nano Electronics (CNE) announced a collaboration to develop new RFID and microcontrollers products based on Adesto's RRAM memory technology (CBRAM).

The three companies say that the combination of RRAM with HLMC's 55nm ultra-low-power front-end process and CNE's 300 mm back-end processing will enable cost-effective embedded and standalone RRAM devices.

Crossbar announced that Microsemi, the largest US military and aerospace semiconductor supplier, has signed a licensing agreement which will bring Crossbar's RRAM technology to Microsemi's products.

As part of the agreement, Microsemi and Crossbar will collaborate in the research, development and application of Crossbar’s proprietary ReRAM technology in next generation products from Microsemi.

Israel-based SiOx RRAM developer Weebit Nano announced that it has extended its agreement with Leti to further develop and optimize Weebit’s ReRAM memory technology. Weebit says that this extension will allow it to accelerate the optimizing of the manufacturing process required to achieve industry standard capabilities with its Silicon Oxide (SiOx) ReRAM memory technology.

Weebit and Leti aim to demonstrate a 40nm 1Mb memory array by mid-2018. Weebit and Leti also plan to initiate work on 28nm nodes later this year. In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technology and business.

Rambus, in collaboration with GigaDevice, launched a new company called Reliance Memory, to commercialize RRAM technology for embedded devices. Rambus also announced the strategic investment partners in Reliance Memory - THG Ventures, West Summit Capital, Walden International and Zhisland Capital.

Rambus is developing RRAM technologies since 2012, when it acquired Unity Semiconductor, an RRAM developer, for $35 million. In 2017 Rambus licensed its RRAM patents to Western Digital.

Strategic Elements announced that it has been awarded $100,000 AUD together with CSIRO to fund trial a development of methods to optimize the levels of organic materials in the company's Memory Ink, for industrial level processes. The project was awarded to SER's 100% owned subsidiary, Australian Advanced Materials (AAM).

SER also announced that it expects to receive $840,000 AUD under the Australian Federal Government Research and Development rebate.

Israel-based SiOx RRAM developer Weebit Nano demonstrated in November 2017 a 40nm working ReRAM memory cell. The company has now announced that it has successfully scaled up the single memory cell into a 4Kb array.

Weebit Nano says that an analysis of the 4Kb wafers showed no degradation due to scaling. The company is now confident in its goal of a working 40nm 1Mb array by mid-2018.

Earlier this year, Weebit Nano announced that it aims to produce 40nm working SiOx RRAM cell samples by the end of 2017, and the company today announced that it achieved that milestone - one month ahead of schedule.

Weebit further reports that measurements performed on the 40nm memory cells on various wafers verified the ability of Weebit Nano SiOx ReRAM cells to maintain its memory behaviour in accordance with previous experiments performed on 300nm cells.

Israel-based SiOx RRAM developer Weebit Nano recently announced success in demonstrating a 4Kbit array in 300nm. Weebit now updates that it has successfully demonstrated the reliability of data retention and endurance in its 300 nm 4Kb memory cells. data retention lifetime extrapolation demonstrated the ability to maintain written data for 10 years at above room temperature. In addition the chips maintained their data after 30 minutes at 260 degrees, exceeding the soldering requirements of 15 minutes at that temperatures.

Weebit says that these results successfully conclude the 300 nm 4Kb characterization. Weebit says that the endurance results are significantly higher than the program/erase cycling of existing Flash technology.