The 11th annual Flash Memory Summit is a three day event that includes seminars, forums, keynotes and sessions.
The China RRAM International Workshop will take place at Soochow University in June 2017, with the objective of becoming the major forum in China for discussion on resistive random access memories.
Topics of interest include ReRAM, CBRAM, 2D materials in RRAM, novel in-situ characterization methods, and RRAM based neuromorphic computing.
Beyond CMOS: From Devices to Systems, is an international workshop that will bring together researchers and executives from academia and industry to discuss the different implications of emerging solid state memories on computer industry.
The workshop will discuss device physics, circuits, architecture, reliability, security, and systems. Technologies under review will include RRAM, MRAM, PCM, 3D Xpoint, Memristors, and others.
The 10th annual Flash Memory Summit is a three day event that includes seminars, forums, keynotes and sessions.
The 8th international memory workshop (IMW) is a conference that is focused on memory process and design technologies, applications and market strategies. It covers all memory technologies, including Flash, DRAM, SRAM, PCRAM, MRAM and RRAM.
The 7th annual NVM workshop will bring together scientists and engineers from industry and academia who are working on advanced non-volatile storage devices and systems.