Weebit Nano demonstrated a 300 nm 4Kb Silicon Oxide RRAM cell

Weebit Nano announced that it has managed to produce a 4Kb array on 300 nm cells, with 100% yield on selected arrays. Weebit says that this result validates its technology and that this demonstration was the final significant step towards the next goal for the company - a 40nm RRAM Silicon Oxide working cell by the end of 2017.

Data saved in Weebit Nano's 300nm 4Kbit array (Reset cells in orange)

Preliminary speed tests of Weebit's technology showed that write speeds could be 100 to 1000 times faster than traditional 3D Flash technology while using significantly lower energy.

The 4Kb array characterization results were achieved in Leti’s pre-industrialisation facilities in Grenoble, France. Weebit partnered with Leti to co-develop advanced RRAM devices based on silicon oxide in September 2016, and in November 2016 Weebit announced that its ReRAM memory technology has been successfully transferred from Rice University’s facilities to Leti’s pre-industrialisation facility in Grenoble, France. The primary milestone of the joint Weebit-Leti project is to develop a 1,000 bit array, followed by the development of a 1-million-bit array.

Posted: Oct 16,2017 by Ron Mertens