RRAM News - Page 6

Israel-based SiOx RRAM developer Weebit Nano announced a new development program partnership with chip-design software developer Silvaco to develop a Technology Computer-Aided Design (TCAD) solution to accurately model the electrical behavior of Weebit Nano’s ReRAM devices.

Weebit says that this new collaboration will accelerate the incorporation of Weebit Nano’s ReRAM modules into advanced semiconductor designs. Silvaco will use the developed model as the basis for creating a TCAD solution for joint customers employing ReRAM technology.

Israel-based RRAM developer Weebit Nano announced that its partnership with Leti continues, and Leti and Weebit extended the partnership to include adapting Weebit's RRAM production process to 300 mm wafers, at 28 nm.
Up until now Leti and Weebit's development was done on 200 mm wafers using 40 nm technology. Weebit believes that the move to 300 mm and 28 nm will be quick - and it will be done by the end of Q4 2019. The move to 28 nm will improve Weebit's RRAM cells and enable them to fit even the smallest geometries being used in the market today.

Market analyst firm Yole Developpement presents its latest next-generation memory forecasts in an interesting new article. The company says that following more than 15 years of development, PCM is finally taking off in stand-alone applications due to strong support from Intel and Micron.

While STT-MRAM is expected to lead the embedded memory race, Yole says that Stand-alone RRAM will try to catch market share to PCM on SCM application. RRAM was actually expected to be the first stand-alone technology to compete with 3D XPoint, but it has suffered repeated delays due to technical challenges. Yole expects RRAM to "return to the race for SCM" after 2020, and possibly start competing with NAND for mass storage applications.

Strategic Elements announces has signed an agreement with the University of New South Wales (UNSW) to further optimize the company's Nanocube Memory Ink flexible/transparent RRAM technology. UNSW and SER will also develop demonstrator applications for the new technology.

UNSW will begin the research by assessing potential demonstrator applications in areas such as multi-functional capacitive sensors that can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction. It will also look into developing memory arrays that will fulfill the growing requirement for local digital data storage on flexible sensors, tags, wearables and high value consumer packaging.

Israel-based SiOx RRAM developer Weebit Nano announced that it will partner with the Non-Volatile Memory Research Group of the Indian Institute of Technology Delhi (IITD) to work jointly on a Neuromorphic RRAM project.
The NVMRG group will research the use of Weebit Nano’s SiOx RRAM technology for certain types of neuromorphic applications, which are used for artificial intelligence. RRAM devices are very promising candidates for enabling high-density and ultimately scaled synaptic arrays in neuromorphic architectures as they are significantly smaller and more energy efficient than current AI data centers, and mimic the brain’s biological computation at the neuron and synaptic level.

Strategic Elements announces that it has received financial support from the Australian government to extend the development of its Nanocube RRAM memory ink with CSIRO. The $100,00 grant will be co-funded by the government and SER.
The program of work at CSIRO is expected to be conducted over a 12-week period, and SER will make progress updates where appropriate.

Crossbar's VP of Business Development, Sylvain Dubois, demonstrates how the company's ReRAM memory can be used for artificial intelligence edge computing acceleration.

In the demonstration, the classification of license plates or face recognition is performed in only one iteration showing energy-efficient massive parallelism at deterministic performance.

Israel-based SiOx RRAM developer Weebit Nano has raised $3 million AUD ($2.16 million USD) via a share placement and the company also plans to raise a further $1 million soon. Weebit's board of directors invested $150,000 as part of this placement.

Weebit recently announced that it has packaged its first memory devices into chips, which can now be shipped to its partners. The first RRAM memory will be delivered to universities to research the use of ReRAM technology in neuromorphic computing, and additional chips are planned to be shipped to commercial partners.

Israel-based SiOx RRAM developer Weebit Nano announced that it has packaged its first memory devices into chips, which can now be shipped to its partners. The company says that its first RRAM memory will be delivered to universities to research the use of ReRAM technology in neuromorphic computing.

Additional chips are planned to be shipped to commercial partners once they engage to explore the possibility to work with Weebit Nano’s technology.

Strategic Elements announces an updates regarding its Memory Ink project status - and said that it has recently tested its spin-coated Memory Ink device (based on a glass substrate and silver electrodes). The tests, performed at UNSW, were successful and 100% of the memory cells operated successfully and showed "suitable" endurance.

SER is working with CSIRO, which reproduced the tests done at UNSW successfully - although the endurance results achieved at UNSW could not be repeated. SER will continue to work with UNSW to understand the variability in process and results. The company is also looking into a collaboration with VTT Finland.