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Resistive RAM is a non-volatile computer memory that uses materials that change their resistance - or memristors. RRAM is still in its early stages, but it may enable fast, efficient and small memory chips
Israel-based RRAM developer Weebit Nano has entered into its first commercial deal with US-based semiconductor foundry SkyWater Technologies. The deal includes a technology transfer agreement and a non-exclusive licensing agreement.
Weebit's ReRAM technology will be transferred to SkyWater’s production fab and then qualified for volume production by the end of 2022.
Researchers from Kyushu University and the National Taiwan Normal University developed a new RRAM device, readable through both electrical and optical methods. The device is based on perovskite quantum dots that enable to simultaneously store and visually transmit data.
By integrating a light-emitting electrochemical cell with a resistive random-access memory that are both based on perovskite, the team achieved parallel and synchronous reading of data both electrically and optically in a ‘light-emitting memory.’
The project NEUROTEC (“Neuro-inspired artificial intelligence technologies for the electronics of the future”) was launched in November 2019 to develop innovative "Beyond von Neumann" concepts for highly energy-efficient devices. The two-year project shows the great potential of a future neuromorphic computer.
The project aims to fuse two major technologies - machine learning and artificial neural networks (ANNs) and memristive materials and devices - especially redox-based RRAM and phase change memories (PCM). The project's mandate is to develop a full-range of basic technologies ranging from dedicated material deposition technologies, integration technologies, measurement technologies, the development of simulation and modelling tools, up to the design and realization of novel AI circuits.
Israel-based RRAM developer Weebit Nano announced that it completed the design and the tape-out of its first embedded RRAM module. This integrated test-chip will be used as the final platform for testing and qualification, ahead of customer production.
Weebit says that it has used its patent-pending analog and digital smart circuitry to significantly enhance the array's technical parameters, including speed, retention and endurance. The test chip comprises a full sub-system in which the module is embedded, enabling potential customers to use it as a development and prototyping platform for new products such as low-energy IoT devices.
Israel-based RRAM developer Weebit Nano announced that it has developed the world's first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector. Weebit says that this is a critical step in the company's commercialization path for the discrete (standalone) memory market (which they hope to achieve by 2024).
The selector is a key element in a memory chip as it enables optimized cell access within the memory array. Weebit developed the technology for the integration together with its development partner CEA-Leti. Weebit says that this technology will broaden its target market beyond embedded memory to include discrete memory technology. In future architectures, the company aims to implement 3D memory stacking and crossbar architectures.
IC designer sureCore announced an agreement with UK-based RRAM developer Intrinsic to bring high-performance embedded RRAM to market. The two companies will deliver commercial memory solutions using sureCore’s patented memory architectures and Intrinsic’s novel RRAM cell.
Using a combination of Intrinsic’s CMOS compatible technology and sureCore’s high-performance, low power memory architectures will enable an accelerated development process and delivery of this new embedded non-volatile memory to be realised.
UK-based RRAM developer Intrinsic Semiconductor Technologies (Intrinsic) announced it closed a $1.85 million seed funding round, led by investors UCL Technology Fund and IP Group plc. The company will use the funds to develop prototypes of its RRAM memory devices on 300 mm silicon wafers in collaboration with imec.
Intrinsic was spun-off from the University College London (UCL) in 2017. The UCL Technology Fund is now supporting this next stage in the company's life.