RRAM-Info is a news hub and knowledge center for Resistive RAM technologies.
Resistive RAM is a non-volatile computer memory that uses materials that change their resistance - or memristors. RRAM is still in its early stages, but it may enable fast, efficient and small memory chips
Strategic Elements announced that it has been awarded $100,000 AUD together with CSIRO to fund trial a development of methods to optimize the levels of organic materials in the company's Memory Ink, for industrial level processes. The project was awarded to SER's 100% owned subsidiary, Australian Advanced Materials (AAM).
SER also announced that it expects to receive $840,000 AUD under the Australian Federal Government Research and Development rebate.
Israel-based RRAM developer Weebit Nano demonstrated in November 2017 a 40nm working ReRAM memory cell. The company has now announced that it has successfully scaled up the single memory cell into a 4Kb array.
Weebit Nano says that an analysis of the 4Kb wafers showed no degradation due to scaling. The company is now confident in its goal of a working 40nm 1Mb array by mid-2018.
Earlier this year, Weebit Nano announced that it aims to produce 40nm working SiOx RRAM cell samples by the end of 2017, and the company today announced that it achieved that milestone - one month ahead of schedule.
Weebit further reports that measurements performed on the 40nm memory cells on various wafers verified the ability of Weebit Nano SiOx ReRAM cells to maintain its memory behaviour in accordance with previous experiments performed on 300nm cells.
Israel-based RRAM developer Weebit Nano recently announced success in demonstrating a 4Kbit array in 300nm. Weebit now updates that it has successfully demonstrated the reliability of data retention and endurance in its 300 nm 4Kb memory cells. data retention lifetime extrapolation demonstrated the ability to maintain written data for 10 years at above room temperature. In addition the chips maintained their data after 30 minutes at 260 degrees, exceeding the soldering requirements of 15 minutes at that temperatures.
Weebit says that these results successfully conclude the 300 nm 4Kb characterization. Weebit says that the endurance results are significantly higher than the program/erase cycling of existing Flash technology.
Israel-based Weebit Nano was established in 2014 with an aim to commercialize Rice University's SiOx RRAM technology. Weebit is progressing towards it stated goal of producing a 40nm RRAM Silicon Oxide working cell by the end of 2017.
Coby Hanoch was recently appointed as the company's new CEO, and was kind enough to answer a few questions we had. Coby was VP Worldwide sales at Verisity where he was part of the founding team and grew the company to over $100M sales per year. He was also VP Worldwide sales at Jasper. Mr Hanoch holds a Bachelor of Science in Systems Design from Technion – Israel Institute of Technology.
Q: Coby, you recently joined Weebit as a CEO. What made you excited about Weebit's technology and business?
I believe Weebit’s technology has great potential, especially considering the fact that it is based on standard materials and tools, so once we finish the development we should be able to move more easily into production than other emerging memory technologies I have come across. In addition, and probably more important than the technology, a key driver to the success of a company is the team, and I was very impressed by Weebit’s team and the atmosphere in the company.
Australia-based RRAM developer 4DS Memory announced that it has signed an agreement with Belgium-based imec to develop a transferable manufacturing process for its technology. As part of the agreement the two parties will demonstrate the process with a 1Mbit test chip.
In October 2016 4DS raised $3 million USD to fund its ongoing ReRAM development activities. In October 2016 4DS also announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital.
Weebit Nano announced that it has managed to produce a 4Kb array on 300 nm cells, with 100% yield on selected arrays. Weebit says that this result validates its technology and that this demonstration was the final significant step towards the next goal for the company - a 40nm RRAM Silicon Oxide working cell by the end of 2017.
Preliminary speed tests of Weebit's technology showed that write speeds could be 100 to 1000 times faster than traditional 3D Flash technology while using significantly lower energy.