RRAM-Info is a news hub and knowledge center for Resistive RAM technologies.
Resistive RAM is a non-volatile computer memory that uses materials that change their resistance - or memristors. RRAM is still in its early stages, but it may enable fast, efficient and small memory chips
RRAM developer Crossbar announced a new SPI-based AI accelerator chip, which it calls XPU. The chip targets a specific lookup phase during AI calculations and contains an RRAM memory device and a programmable coparator.
RRAM's low power and non-volatility nature fits this application and according to crossbar can achieve a 30X speed improvement over an ARM+DDR4 combination, while drawing 500X less power (the advantages of the XPU chip are increased with object length).
Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter of intent with China-based memory solution provider XTX Technology to investigating ways in which XTX can use Weebit’s technology in its products.
XTX supplies flash memory based solutions to about 2,00 customers, including leading global semiconductor companies. XTX believes that Weebit’s SiOx ReRAM technology has the potential to be a strong fit for the company's needs.
Israel-based RRAM developer Weebit Nano announced that it is in "advanced discussions" with a Tier-2 company to adapt Weebit's technology to meet the customer's unique memory module requirements.
Weebit Nano also announced that it has signed an agreement with Kitec Design that will be Weebit's representative in South Korea, Weebit's most important market (as Korea produces 57% of the global memory chip supply). Weebit is already engaging with several potential customers in Korea, including the Tier-2 company.
Strategic Elements announced that it has achieved significant technical improvements in its Nanocube Memory Ink technology at the University of New South wales (UNSW). The company is now incorporating these advancements into a transparent demonstrator that will be ready by Q3 2019.
SER says that it has developed new fabrication methods for its memory ink and its production onto plastics. SER has filed patents for these methods.
Applied Materials unveiled new high-volume manufacturing solutions for next-generation memories - Including MRAM, PCRAM and RRAM. The Endura platform integrates multiple materials engineering technologies along with on-board metrology to create new films and structures.
Applied’s Endura Impulse PVD platform for PCRAM and ReRAM production includes up to nine process chambers integrated under vacuum along with on-board metrology to allow the precise deposition and control of the multi-component materials for these emerging memories.
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Israel-based RRAM developer Weebit Nano announced that its partner Leti has perform retention and endurance tests on its SiOx RRAM technology - and found it to be "at the forefront of the market".Weebit says that its RRAM demonstrated retention of over 10 years at 130-150 degrees (these high temperatures could enable its RRAM to target the demanding automotive market). Leti also found that a single SiOx RRAM cell endured a million cycles