Israel-based RRAM developer Weebit Nano announced that it has received the first wafers integrating its
embedded RRAM memory manufactured in GlobalFoundries’ 22FDX platform. Initial tests of the wafers in this advanced 22nm FD-SOI (fully depleted silicon on insulator) are showing positive results on the array.

Weebit says that these are the first wafers with Weebit ReRAM manufactured in 22nm, one of the industry’s most
steadfast process nodes, and a geometry where embedded flash is not viable. 

Infineon Technologies has unveiled a new family of microcontrollers in its PSoC portfolio of Arm Cortex-based high-performance, low-power, secured devices, the PSoC Edge, designed for next generation responsive compute and control applications.

The new PSoC Edge family features hardware-assisted machine learning (ML) and are based on Arm Cortex-M55, including Helium DSP support paired with Arm Ethos-U55 and Cortex-M33 paired with Infineon’s ultra-low power NNLite  hardware accelerator. The family of devices also come with extended on-chip memories, including non-volatile RRAM, as well as high speed, secured external memory support.

Israel-based RRAM developer Weebit Nano announced that it has received its first IP licensing revenue for its embedded ReRAM technology.

This initial licensing fee is $100,000. Weebit’s plan is to generate revenues from foundries and product companies in three main ways: licensing fees for design and manufacture; engineering fees for designs and processes; and royalties for use by customers, which will be received once customers begin shipping end products.

UK-based RRAM developer Intrinsic Semiconductor Technologies (Intrinsic) announced a collaboration with sureCore, to accelerate the time to market for its RRAM technology. Intrinsic says that its technology will assist SoC developers looking for embedded memory solutions in 22 nm or smaller nodes. 

sureCore will add Intrinsic's MRAM technology into its SureFIT Custom Design Service. Intrinsic says that both microcontrollers and evolving AI architectures using Intrinsic RRAM will deliver higher performance at lower power envelopes than those realized using off-chip flash.

Australia-based RRAM developer 4DS Memory  announced that it has achieved “significantly better than expected” analysis results from testing of its latest memory system offering known as the Fourth Platform Lot wafer. 4DS says that the notable improvements to the 4Ds Platform Lot technology has been supported by the company’s ongoing collaboration with world-leading R&D and innovation hub in nanoelectronics and digital technologies developer, imec.

Mr Yen said the company has also proven that 4DS Interface Switching ReRAM technology is transferable, while demonstrating a fully functional megabit array with 4DS Interface Switching ReRAM memory cells. Notably, the tests also highlighted consistent read and write speeds equivalent to DRAM and proven endurance in excess of 2 billion cycles at DRAM read and write speed on a megabit array.

UK-based Intrinsic Semiconductor Technologies (Intrinsic) has raised $8.4 million USD to further develop and commercialize its RRAM memory technology. The funding was led by Octopus Ventures, and was supported by existing investors and the UK government.

Intrinsic was spun-off from University College London (UCL) in 2017. The company's main technology is a silicon-oxide based RRAM memory, which is said to be fully air stable and inherently CMOS compatible. The company says its memory devices will be cheaper and easier to produce compared to competitive technologies.

GlobalFoundries announced that it acquired RRAM technology from Renesas Electronics, for use in chips for home and industrial IoT devices and smart mobile devices.

The RRAM technology originated at Dialog Semiconductor, which Renesas acquired. In 2020, Dialog licensed its CBRAM technology to GlobalFoundries. Dialog's RRAM technology, in turn, was developed by Adesto Technologies which was acquired by Dialog in 2020.

Israel-based RRAM developer Weebit Nano announced that it has taped-out (released to manufacturing) demonstration chips integrating its embedded RRAM module in an advanced 22nm FD-SOI (fully depleted silicon on insulator) process technology.

The company says that this is its first tape-out in 22 nm, one of the industry’s most common process nodes, and a geometry where embedded flash is not viable. Weebit worked with its development partners CEA-Leti and CEA-List to successfully scale its ReRAM technology down to 22nm.