4DS Memory announced that it has decided to take a strategic three-month pause to decide its future direction after an extensive analysis of its Sixth Platform Lot memory technology. 

4DS also said that it will disengage from active collaborations with imec and Infineon Technologies. Following these decisions, 4DS announced that CTO Dr Ting Yen and chief strategy officer Peter Himes had tendered their resignations.

GlobalFoundries announced the availability of its 22FDX+ with RRAM technology. The new RRAM technology, according to GlobalFoundires, delivers secure, low-latency, high-density embedded memory for code storage for wireless microcontrollers and AI IoT applications.

GF’s embedded RRAM offers cost-effective memory with low power read/write, high endurance and excellent retention. On-chip integration with GF’s enhanced 22FDX platform delivers improved data retention, reliability, security and power efficiency, creating compact and versatile system-on-chip (SoC) solutions for intelligent, connected devices. 

TSMC is launching its first design center in Europe, with a focus on memory technologies for automotive applications. 

The company announced that it will start developing 6-nm embedded RRAM technologies, to complement its 28-nm (already qualified), 12-nm (planned). TSMC is targeting high-end automotive applications, specifically AI chips and technologies. It will also start developing 5-nm MRAM chips.

RRAM Developer Weebit Nano announced a partnership with Embedded AI Systems (EMASS), a pioneer in ultra-low-power AI computing. The two companies are collaborating to demonstrate the advantages of RRAM technology for edge AI applications.

Weebit says that the combination of its RRAM technology with EMASS’ ultra-low power AI SoC, at a 22nm process node, aims to enhance energy efficiency, reduce power consumption, and enable instant system wake-up for AI-driven applications, unlocking new capabilities in edge computing.

RRAM developer Weebit Nano announced that it has licensed its RRAM memory technology to onsemi, a tier-1 semiconductor supplier.

Under the terms of the agreement, Weebit ReRAM IP will be integrated into onsemi’s Treo platform, to provide embedded non-volatile memory (NVM). Weebit ReRAM integration into a Bipolar CMOS, DMOS (BCD) process provides a low-power, cost-effective NVM that has proven excellent retention at high temperatures.

4DS Memory announced that it has entered into a significant design agreement with Infineon Technologies to develop a custom RRAM memory test chip. 4DS says that this is a crucial step in its technology advancement.

Under the terms of the agreement, Infineon will provide technical expertise and resources to design the custom RRAM memory test chip based on 4DS's requirements. 4DS will pay a total of $4.5 million USD for the initial 15-month scope of work. 4DS will announce plans to raise new capital to support this agreement.

RRAM developer Weebit Nano announced that it has raised $50 million AUD (about $32.4 million USD) through a strongly supported underwritten placement to institutional investors.

The company says that funds will be used to expand the company’s commercialization activities, support new customer and partner agreements, and accelerate the development of its cutting-edge RRAM technology.

Qualcomm Technologies has announced two new IOT chipsets, the Qualcomm QCC730M and Qualcomm QCC74xM modules. The company says that these modules are perfectly suited for IoT applications in the smart home, smart appliances and more.

The QCC730M chip is is a dual-band, micro-power Wi-Fi 4 module. Offering a dedicated 60Mhz MCU units, 640kB of SRAM and 1.5Mb  RRAM memory. The QCC730M also integrates hardware crypto accelerator, and secure boot, debug, and storage.

China-based Xianxin Technology, in collaboration with several research institutes in China, have developed the world's first 28 nm image quality adjustment chip that is powered by embedded RRAM memory.

The company says it is now mass producing the new driver IC, which will be supplied to high-end miniLED LCD TV makers. The company says that by adopting RRAM rather than the mainstream external Flash memory, it enables faster read operations, and lower cost production. 

Researchers from the University of Michigan have discovered the role of phase separation in memristor mechanism, thus paving the way to improving RRAM memory. 

Up until now, researchers were not sure why memristors retain their memory for a long time, as current models did not explain this fully. The new researchers explain that in memristors, oxygen ions prefer to be away from the filament and will never diffuse back, even after an indefinite period of time.