RRAM-Info is a news hub and knowledge center for Resistive RAM technologies.
Resistive RAM is a non-volatile computer memory that uses materials that change their resistance - or memristors. RRAM is still in its early stages, but it may enable fast, efficient and small memory chips
Israel-based SiOx RRAM developer Weebit Nano announced that it has packaged its first memory devices into chips, which can now be shipped to its partners. The company says that its first RRAM memory will be delivered to universities to research the use of ReRAM technology in neuromorphic computing.
Additional chips are planned to be shipped to commercial partners once they engage to explore the possibility to work with Weebit Nano’s technology.
Strategic Elements announces an updates regarding its Memory Ink project status - and said that it has recently tested its spin-coated Memory Ink device (based on a glass substrate and silver electrodes). The tests, performed at UNSW, were successful and 100% of the memory cells operated successfully and showed "suitable" endurance.
SER is working with CSIRO, which reproduced the tests done at UNSW successfully - although the endurance results achieved at UNSW could not be repeated. SER will continue to work with UNSW to understand the variability in process and results. The company is also looking into a collaboration with VTT Finland.
Adesto Technologies announced that DB HiTek (formerly known as Dongbu HiTek) has licensed its RRAM (CBRAM) memory technology. DB HiTek will use Adesto's RRAM as its embedded non-volatile memory for IoT and other ultra-low power customer designs.
DB HiTek is a South Korea based analog and mixed-signal foundry, and it will use Adesto's technology at 180nm. DB HiTek says that Adesto's CBRAM operates at lower voltages, consumes less power and requires fewer processing steps compared to conventional embedded flash technologies.
Israel-based RRAM developer Weebit Nano announced that it produced a 1Mb array of its silicon-oxide ReRAM at 40nm. The 1Mb initial tests, conducted in CEA/Leti facilities in Grenoble, France, demonstrated the capability of addressing and programming nearly all of the memory cells.
Last month Weebit and Leti extended their co-development agreement. In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technolgoy and business.
Adesto, Shanghai Huali Microelectronics Corporation (HLMC) and Crocus Nano Electronics (CNE) announced a collaboration to develop new RFID and microcontrollers products based on Adesto's RRAM memory technology (CBRAM).
The three companies say that the combination of RRAM with HLMC's 55nm ultra-low-power front-end process and CNE's 300 mm back-end processing will enable cost-effective embedded and standalone RRAM devices.
Crossbar announced that Microsemi, the largest US military and aerospace semiconductor supplier, has signed a licensing agreement which will bring Crossbar's RRAM technology to Microsemi's products.
As part of the agreement, Microsemi and Crossbar will collaborate in the research, development and application of Crossbar’s proprietary ReRAM technology in next generation products from Microsemi.
Israel-based RRAM developer Weebit Nano announced that it has extended its agreement with Leti to further develop and optimize Weebit’s ReRAM memory technology. Weebit says that this extension will allow it to accelerate the optimizing of the manufacturing process required to achieve industry standard capabilities with its Silicon Oxide (SiOx) ReRAM memory technology.
Weebit and Leti aim to demonstrate a 40nm 1Mb memory array by mid-2018. Weebit and Leti also plan to initiate work on 28nm nodes later this year. In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technology and business.