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Resistive RAM is a non-volatile computer memory that uses materials that change their resistance - or memristors. RRAM is still in its early stages, but it may enable fast, efficient and small memory chips
Israel-based RRAM developer Weebit Nano Announced that it secured $3.1 million in a combined placement and entitlement offer. The company has also announced that it is progressing in its project to develop a customized ReRAM memory module for its South Korean customer - and aims to to deliver the module in mid-2020.
Weebit says that it aims to transfer its facilities to production capacity by the end of 2020.
Singapore's Nanyang Technological University (NTU Singapore) and GlobalFoundries announced a partnership to jointly research next-generation RRAM memories. The two partners will invest $88 million USD with an aim to demonstrate RRAM memory devices produced on 12-inch wafers.
NTU and GF-Singapore are already collaborating on spintronics - the study of electron spin and its applications, including MRAM memory (NTU and GF are founding members of the Singapore Spintronics Consortium. In this new ReRAM project, 16 researchers will work together to research areas such as circuit design for next-generation smart devices and chip packaging for advanced IoT applications.
Strategic Elements announced that it is developing a transparent memory demonstrator, in collaboration with UNSW, CSIRO and the VTT Group. The demonstrator will include a 10.4" transparent display and SER's own printable transparent Nanocube Memory Ink (RRAM memory).
The demonstrator is transparent until touched, which then waits for a user to press the authentication code. This demo will showcase the possibility of print functional memory on transparent glass. The demonstrator is due in Q4 2019 (the main delay, according to SER, is the sourcing of the transparent display).
RRAM developer Crossbar announced a new SPI-based AI accelerator chip, which it calls XPU. The chip targets a specific lookup phase during AI calculations and contains an RRAM memory device and a programmable coparator.
RRAM's low power and non-volatility nature fits this application and according to crossbar can achieve a 30X speed improvement over an ARM+DDR4 combination, while drawing 500X less power (the advantages of the XPU chip are increased with object length).
Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter of intent with China-based memory solution provider XTX Technology to investigating ways in which XTX can use Weebit’s technology in its products.
XTX supplies flash memory based solutions to about 2,00 customers, including leading global semiconductor companies. XTX believes that Weebit’s SiOx ReRAM technology has the potential to be a strong fit for the company's needs.
Israel-based RRAM developer Weebit Nano announced that it is in "advanced discussions" with a Tier-2 company to adapt Weebit's technology to meet the customer's unique memory module requirements.
Weebit Nano also announced that it has signed an agreement with Kitec Design that will be Weebit's representative in South Korea, Weebit's most important market (as Korea produces 57% of the global memory chip supply). Weebit is already engaging with several potential customers in Korea, including the Tier-2 company.
Strategic Elements announced that it has achieved significant technical improvements in its Nanocube Memory Ink technology at the University of New South wales (UNSW). The company is now incorporating these advancements into a transparent demonstrator that will be ready by Q3 2019.
SER says that it has developed new fabrication methods for its memory ink and its production onto plastics. SER has filed patents for these methods.