Australia-based RRAM developer dorsaVi announced that it has commenced physical manufacturing of its first RRAM-CMOS validation chip. The company's manufacturing data package has passed foundry intake, the wafer lot has been committed to fabrication, and processing is now underway on the front-end CMOS base.

The chip began its tape-out process in July 2026, and the current run will produce the transistor and circuit-level structures needed to support the RRAM memory array, the peripheral circuits and various evaluation features - before the RRAM-specific layers are added. Once the CMOS base is complete, the wafers will move on to partner-led back-end-of-line processing and RRAM stack integration, followed by electrical testing and characterisation.

Researchers from Peking University in Beijing, China, working with the Beijing Advanced Innovation Center for Integrated Circuits, have proposed a protection framework for RRAM-based deep neural network (DNN) accelerators. In this framework, the researchers split accelerator security into two distinct levels. The framework, called OmniGuard, achieves a 1.33x to 4.38x speedup and 1.26x to 2.65x power savings, with a reported 5% energy overhead and 3% area overhead.

RRAM-based computing-in-memory (CIM) accelerators have become one of the mainstream options for running neural network inference on edge devices, as performing the multiply-accumulate operation inside the memory array itself avoids the data movement that dominates the energy budget of conventional von Neumann designs. But edge hardware sits in the field, physically accessible to whoever holds it, and the trained model weights programmed into the RRAM array are usually the most valuable asset on the chip. The researchers note that these security vulnerabilities are a real obstacle to deploying RRAM-based accelerators commercially.

Researchers from the College of Electronic and Optical Engineering at Nanjing University of Posts and Telecommunications (NJUPT) in Nanjing, China, have designed, fabricated and measured a single-pole single-throw (SPST) RF switch built on an RRAM process. The switch operates across the DC-Ku band with a measured insertion loss below 1 dB, and it holds its state without any standing bias.

RF switches sit in the front-end of nearly every wireless system, routing signals between transmit and receive paths. The standard options used today, field-effect transistors, PIN diodes and RF MEMS, all share a drawback: they need a continuous bias voltage or drive current to stay in either the ON or the OFF state. Over long operating periods that translates into meaningful static power draw and thermal management headaches, which is exactly the wrong trade-off for battery-powered IoT nodes and wearables.

Researchers at China's Tsinghua University, together with InnoMem Technologies, have developed a 16Mb embedded RRAM device with a hybrid array structure, built on a 28 nm process, that is highly suited for automotive OTA update applications.

The researchers say that the new 1T1R/2T2R hybrid array structure design enhances the reliability and system compatibility. The researcher used several technologies to increase performance - a load balancing approach to address the IR-drop issue and improve cell uniformity, and a hierarchical column selection strategy to suppress the leakage current in the write path, optimizing write operations at high temperature.

RRAM developer Weebit Nano announced that it has successfully raised $87 million AUD (about $60 million USD) through placements with institutional investors and a separate offering in Israel.

The company will use the funds to support both technical advancements and commercial expansion.

RRAM developer Weebit Nano announced that it has licensed its RRAM technology to Texas Instruments.

Under the agreement, Weebit's technology will be integrated into TI's advanced process nodes for embedded processing semiconductors. The collaboration covers IP licensing, technology transfer, design, and qualification of Weebit RRAM within TI's process technologies.

YF Capital has acquired a 2.1% stake in InnoStar, a Shanghai-based RRAM developer established in 2019. YF Capital is a private equity firm, linked to Alibaba's Jack Ma. This follows an investment by Ant Group (also founded by Jack Ma) in August 2025. 

Last year ByteDance (owner of TikTok) also investment in InnoSTar, and holds a ~9% stake. InnoStar uses a 28-nm process and is said to be China's first RRAM developer.

4DS Memory announced that it has decided to take a strategic three-month pause to decide its future direction after an extensive analysis of its Sixth Platform Lot memory technology. 

4DS also said that it will disengage from active collaborations with imec and Infineon Technologies. Following these decisions, 4DS announced that CTO Dr Ting Yen and chief strategy officer Peter Himes had tendered their resignations.

GlobalFoundries announced the availability of its 22FDX+ with RRAM technology. The new RRAM technology, according to GlobalFoundires, delivers secure, low-latency, high-density embedded memory for code storage for wireless microcontrollers and AI IoT applications.

GF’s embedded RRAM offers cost-effective memory with low power read/write, high endurance and excellent retention. On-chip integration with GF’s enhanced 22FDX platform delivers improved data retention, reliability, security and power efficiency, creating compact and versatile system-on-chip (SoC) solutions for intelligent, connected devices. 

TSMC is launching its first design center in Europe, with a focus on memory technologies for automotive applications. 

The company announced that it will start developing 6-nm embedded RRAM technologies, to complement its 28-nm (already qualified), 12-nm (planned). TSMC is targeting high-end automotive applications, specifically AI chips and technologies. It will also start developing 5-nm MRAM chips.