Strategic Elements reports a new Nanocube Memory prototype on a silicon substrate

Strategic Elements logoNanocube Memory developer Strategic Elements have fabricated a new prototype memory cell on a silicon substrate that achieved data writing speeds "over 1000 times faster than today state-of-the-art flash memory technology".

The new prototype also needs a lower voltage - 40% less voltage required by flash memory.

Nanocube Memory is based on RRAM, but unlike other RRAM cells it can be printed and enables memory chips that are flexible and transparent. Nanocube cells are printable at room temperatures and do not require a vacuum environment.

Posted: Dec 15,2015 by Ron Mertens