Leti confirms the Reproducibility of Weebit Nano's RRAM tech, details plans for a 40nm cell

A couple of months ago, we reported that Israel-based RRAM developer Weebit Nano partnered with France-based research institute Leti, to co-develop advanced RRAM devices based on silicon oxide.

Weebit Nano now announced that its SiOx ReRAM memory technology has been successfully transferred from Rice University’s facilities to Leti’s pre-industrialisation facility in Grenoble, France. Leti's initial experiments confirm that Weebit’s unique nano-porous SiOx process is reproducible.

The primary milestone of this project is to develop a 1,000 bit array, followed by the development of a 1-million-bit array. Leti is expected to release a detailed report on the development process and optimization of the technology in the first quarter of 2017. The report will also detail the plans to create a 40nm RRAM cell by late 2017.

Posted: Nov 09,2016 by Ron Mertens