A couple of months ago, we reported that Israel-based RRAM developer Weebit Nano partnered with France-based research institute Leti, to co-develop advanced RRAM devices based on silicon oxide.

Weebit Nano now announced that its SiOx ReRAM memory technology has been successfully transferred from Rice University’s facilities to Leti’s pre-industrialisation facility in Grenoble, France. Leti's initial experiments confirm that Weebit’s unique nano-porous SiOx process is reproducible.

Israel-based RRAM developer Weebit Nano announced that it partnered with France-based research institute Leti. Leti and Weebit Nano will work on advanced RRAM devices based on silicon oxide.

As part of that agreement, Weebit will gain access to the advanced facilities of Leti, including an 8,500 square meters semiconductor cleanroom area.

Israel-based RRAM developer Weebit Nano has made its debut on the Australian share market, trading under the ticker ASX:WBT, following a reverse merger with a mining company shell called Radar Iron Ltd.

As part of the share floating, Weebit raised $5 million AUD, and the company reportedly aims to raise a further $10 million AUD in the coming weeks. The company's shares started the day at 5 cents but ended it on 4 cents putting the market cap at $13.4 million AUD.

Weebit Nano announced a "significant breakthrough" in its nano-porous silicon-oxide (SiOx) RRAM memory devices development. Weebit has managed to scale down its device filament (the conductive path that either allows a current to flow or not) to a sub-5nm scale, without any deterioration of performance reliability.

Weebit, based in Israel, is commercializing technology originally developed at Rice University. The company is currently negotiating with "major semiconductor manufacturers" regarding joint venture development. The company expects to show a commercially viable product within 18 months.