Researchers developed a new high-performance bilayer self-selective RRAM device by using HfO2 as a memory swtching layer and mixed ionic and electron conductor as selective layer. The researchers say that this device exhibits high nonlinearity and ultra-low half-select leakage.

This new design may be a way to integrate individual selector devices with memory cell separately in a vertical RRAM device. The researchers successfully demonstrated a four layer vertical crossbar array - with high uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity.

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