Mar 10, 2017

Researchers from Soochow University in China in collaboration with researchers form Havard, Stanford and MIT developed RRAM memory devices using multilayer hexagonal boron nitride (h-BN) as dielectric. The devices show promising performance - while being based on a 2D material, which may pave the way towards extremely thin and efficient memory devices.

h-BN enables a 2D RRAM device image

2D materials (such as h-BN and others) are interesting to many researchers, and the field is experiencing a boom following the "discovery" of graphene in 2004.