Researchers from Soochow University in China developed a 2D RRAM device structure based on sheets of graphene and hexagonal boron nitride (hBN). The device uses a Graphene/hBN/Graphene structure and it features excellent overall fitting results.
This is still just a theoretical model, but it may prove to be the basis of high performance RRAM devices.
A few months ago the same research group (in collaboration with researchers form Harvard, Stanford and MIT) unveiled RRAM memory devices that use multilayer hexagonal boron nitride (h-BN) as dielectric. It seems that in this newly shown device the researchers added two graphene layers.