Researchers from Soochow, China, developed a graphene/hBN based 2D RRAM device

Researchers from Soochow University in China developed a 2D RRAM device structure based on sheets of graphene and hexagonal boron nitride (hBN). The device uses a Graphene/hBN/Graphene structure and it features excellent overall fitting results.

2D Graphene / hBN RRAM design

This is still just a theoretical model, but it may prove to be the basis of high performance RRAM devices.

A few months ago the same research group (in collaboration with researchers form Harvard, Stanford and MIT) unveiled RRAM memory devices that use multilayer hexagonal boron nitride (h-BN) as dielectric. It seems that in this newly shown device the researchers added two graphene layers.

Posted: Jun 01,2017 by Ron Mertens