4DS Memory

4DS Memory announced that it has decided to take a strategic three-month pause to decide its future direction after an extensive analysis of its Sixth Platform Lot memory technology. 

4DS also said that it will disengage from active collaborations with imec and Infineon Technologies. Following these decisions, 4DS announced that CTO Dr Ting Yen and chief strategy officer Peter Himes had tendered their resignations.

4DS Memory announced that it has entered into a significant design agreement with Infineon Technologies to develop a custom RRAM memory test chip. 4DS says that this is a crucial step in its technology advancement.

Under the terms of the agreement, Infineon will provide technical expertise and resources to design the custom RRAM memory test chip based on 4DS's requirements. 4DS will pay a total of $4.5 million USD for the initial 15-month scope of work. 4DS will announce plans to raise new capital to support this agreement.

In 2017, Australia-based RRAM developer 4DS Memory signed an agreement with Belgium-based IMEC to develop a transferable manufacturing process for its technology. 4DS now announced that it has renewed its R&D collaboration with the IMEC research institute after receiving positive results from its fourth lot of test chips.

4DS will pay IMEC 1.92 million Euro for the activities in 2024, and the company expects IME to deliver its 5th and 6th batch of 1 Mbit array chips in Q3 2024. The 6th batch will be based on a 20 nm process. 

Australia-based RRAM developer 4DS Memory announced a new type of RRAM technology specifically for AI processing, that enables high-bandwidth, high-endurance persistent memory for big data and neural net applications.

4DS says that as its RRAM requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window, it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age.

Australia-based RRAM developer 4DS Memory  announced that it has achieved “significantly better than expected” analysis results from testing of its latest memory system offering known as the Fourth Platform Lot wafer. 4DS says that the notable improvements to the 4Ds Platform Lot technology has been supported by the company’s ongoing collaboration with world-leading R&D and innovation hub in nanoelectronics and digital technologies developer, imec.

Mr Yen said the company has also proven that 4DS Interface Switching ReRAM technology is transferable, while demonstrating a fully functional megabit array with 4DS Interface Switching ReRAM memory cells. Notably, the tests also highlighted consistent read and write speeds equivalent to DRAM and proven endurance in excess of 2 billion cycles at DRAM read and write speed on a megabit array.

Australia-based RRAM developer 4DS Memory announced that it has raised a total of $7.6 million AUD ($5.45 million USD) in two financing round.

4DS Memory says that it will use the funds to further develop its Interface Switching ReRAM technology with imec and Western Digital's subsidiary, HGST.

Australia-based RRAM developer 4DS Memory announced that it has signed an agreement with Belgium-based imec to develop a transferable manufacturing process for its technology. As part of the agreement the two parties will demonstrate the process with a 1Mbit test chip.

In October 2016 4DS raised $3 million USD to fund its ongoing ReRAM development activities. In October 2016 4DS also announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital.

US-based RRAM developer 4DS Memory announced that it has measured the endurance yield of more than 1,000 cells of five different cell sizes on two different wafers, and more than 97% of the memory cells tested achieved the required endurance goal, significantly exceeding the target of 90% endurance yield.

4DS recently announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital. The company also successfully completed a placement of $3 million USD.

Australia-based RRAM developer 4DS Memory announced the successful completion of a placement of $4 million AUD (about $3 million USD). 4DS says that the placement was significantly oversubscribers and the proceedings will be used to fund 4DS' ongoing RRAM development activities.

A few days ago 4DS announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital.

Australia-based RRAM developer 4DS Memory announced that it developed a working 40nm RRAM memory cells. This was achieved in collaboration with HGST, a subsidiary of Western Digital.

The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. The cells have no filaments and are so easier to scale compared to filamentary RRAM.