Oct 18, 2016

4DS Memory logoUS-based RRAM developer 4DS Memory announced that it developed a working 40nm RRAM memory cells. This was achieved in collaboration with HGST, a subsidiary of Western Digital.

The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. The cells have no filaments and are so easier to scale compared to filamentary RRAM.

4DS says it has been collaboration with HGST for the past two years under a joint development agreement (JDA). When the JDA commenced, 4DS memory cells were at 800 nm. The JDA was renewed in July 2016 for a further 12 months and is focused on optimizing scalability and cycling endurance or RRAM cells for the mobile and cloud gigabyte silicon storage market. 4DS invested about $12 million in RRAM R&D in the past decade.