January 2016

Researchers from the MIT developed a perovskite thin-film material whose electrical properties can be switched between metallic and semiconducting, simply by applying a small voltage. The material then stays in its new configuration until switched back by another voltage.

This type of material could lead to a new memristor design as it can retain information when the power is switched off. This is still an early-stage development, but one that we should keep an eye on.

Weebit Nano announced a "significant breakthrough" in its nano-porous silicon-oxide (SiOx) RRAM memory devices development. Weebit has managed to scale down its device filament (the conductive path that either allows a current to flow or not) to a sub-5nm scale, without any deterioration of performance reliability.

Weebit, based in Israel, is commercializing technology originally developed at Rice University. The company is currently negotiating with "major semiconductor manufacturers" regarding joint venture development. The company expects to show a commercially viable product within 18 months.