Recent RRAM News - Page 3

Australia-based RRAM developer 4DS Memory announced a new type of RRAM technology specifically for AI processing, that enables high-bandwidth, high-endurance persistent memory for big data and neural net applications.

4DS says that as its RRAM requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window, it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age.

ByteDance (owner of TikTok) invested in InnoStar, a Shanghai-based RRAM developer established in 2019. ByteDance, through its Picoheart subsidiary, now holds a 9.5% share in InnoStar, making it the company's third largest stakeholder, after Memris Asia Pacific (28.8%) and Shanghai Alliance (26.3%). 

Picoheart is ByteDance's VR developer, which means that ByteDance likely hopes to adopt RRAM technology in future VR headsets.

US-based Tetramem published a paper that shows its form of RRAM-powered analog computing is capable of executing calculations with arbitrary precision. It says the ability to perform high-precision multiplication within single electronic devices that can be readily formed in arrays offers scope to reduce the power consumption of machine learning when based on artificial neural networks.

The Tetramem device is made of a mixture of Al3O2, above a layer of HfO2 sandwiched between a tantalum/titanium top electrode and a platinum bottom electrode. Each of the bilayers is less than 1nm thick so that after being laid down they appear to form a mixed layer rather than two separate continuous layers. The device was fabricated in a 240-nm diameter via above the CMOS peripheral circuitry.

Israel-based RRAM developer Weebit Nano announced that it has received the first wafers integrating its
embedded RRAM memory manufactured in GlobalFoundries’ 22FDX platform. Initial tests of the wafers in this advanced 22nm FD-SOI (fully depleted silicon on insulator) are showing positive results on the array.

Weebit says that these are the first wafers with Weebit ReRAM manufactured in 22nm, one of the industry’s most
steadfast process nodes, and a geometry where embedded flash is not viable. 

Infineon Technologies has unveiled a new family of microcontrollers in its PSoC portfolio of Arm Cortex-based high-performance, low-power, secured devices, the PSoC Edge, designed for next generation responsive compute and control applications.

The new PSoC Edge family features hardware-assisted machine learning (ML) and are based on Arm Cortex-M55, including Helium DSP support paired with Arm Ethos-U55 and Cortex-M33 paired with Infineon’s ultra-low power NNLite  hardware accelerator. The family of devices also come with extended on-chip memories, including non-volatile RRAM, as well as high speed, secured external memory support.

Israel-based RRAM developer Weebit Nano announced that it has received its first IP licensing revenue for its embedded ReRAM technology.

This initial licensing fee is $100,000. Weebit’s plan is to generate revenues from foundries and product companies in three main ways: licensing fees for design and manufacture; engineering fees for designs and processes; and royalties for use by customers, which will be received once customers begin shipping end products.

UK-based RRAM developer Intrinsic Semiconductor Technologies (Intrinsic) announced a collaboration with sureCore, to accelerate the time to market for its RRAM technology. Intrinsic says that its technology will assist SoC developers looking for embedded memory solutions in 22 nm or smaller nodes. 

sureCore will add Intrinsic's MRAM technology into its SureFIT Custom Design Service. Intrinsic says that both microcontrollers and evolving AI architectures using Intrinsic RRAM will deliver higher performance at lower power envelopes than those realized using off-chip flash.

Australia-based RRAM developer 4DS Memory  announced that it has achieved “significantly better than expected” analysis results from testing of its latest memory system offering known as the Fourth Platform Lot wafer. 4DS says that the notable improvements to the 4Ds Platform Lot technology has been supported by the company’s ongoing collaboration with world-leading R&D and innovation hub in nanoelectronics and digital technologies developer, imec.

Mr Yen said the company has also proven that 4DS Interface Switching ReRAM technology is transferable, while demonstrating a fully functional megabit array with 4DS Interface Switching ReRAM memory cells. Notably, the tests also highlighted consistent read and write speeds equivalent to DRAM and proven endurance in excess of 2 billion cycles at DRAM read and write speed on a megabit array.