Event duration: 
Monday, June 12, 2017 to Wednesday, June 14, 2017
Where: 
Soochow University, Suzhou, China

The China RRAM International Workshop will take place at Soochow University in June 2017, with the objective of becoming the major forum in China for discussion on resistive random access memories.

Topics of interest include ReRAM, CBRAM, 2D materials in RRAM, novel in-situ characterization methods, and RRAM based neuromorphic computing.