In March 2016 Crossbar announced its strategic partnership with Semiconductor Manufacturing International Corporation (SMIC) to co-develop and produce RRAM technologies. Crossbar now says it started to sample embedded RRAM chips from SMIC.
SMIC, China's largest semiconductor foundry, is using a 40nm process, and Crossbar says that it plans for a 28nm process - and even 10nm or lower down the road. The chip design uses non-conductive amorphous silicon (a-SI) technology. Crossbar's chips can either use a 1T1R architecture (1 transistor per RRAM, which offers the lowest latency and so useful for embedded memory and caching) or 1TnR (which uses up to 2,000 cells per transistor using a crossbar scheme - which makes for higher density chips useful for storage).
Crossbar says that RRAM chips offer 100 times lower read latency and 20 times faster write performance compared to regular NAND chips.