Weebit Nano completed its first embedded RRAM module design and tape-out

Israel-based RRAM developer Weebit Nano announced that it completed the design and the tape-out of its first embedded RRAM module. This integrated test-chip will be used as the final platform for testing and qualification, ahead of customer production.

Weebit Nano embedded-RRAM test chip scheme

Weebit says that it has used its patent-pending analog and digital smart circuitry to significantly enhance the array's technical parameters, including speed, retention and endurance. The test chip comprises a full sub-system in which the module is embedded, enabling potential customers to use it as a development and prototyping platform for new products such as low-energy IoT devices.

Weebit Nano developed an ReRAM cell integrated with an OTS selector

Israel-based RRAM developer Weebit Nano announced that it has developed the world's first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector. Weebit says that this is a critical step in the company's commercialization path for the discrete (standalone) memory market (which they hope to achieve by 2024).

Weebit Nano ReRAM+OTS cell cross section

The selector is a key element in a memory chip as it enables optimized cell access within the memory array. Weebit developed the technology for the integration together with its development partner CEA-Leti. Weebit says that this technology will broaden its target market beyond embedded memory to include discrete memory technology. In future architectures, the company aims to implement 3D memory stacking and crossbar architectures.

sureCore and Intrinsic collaborate to bring embedded RRAM to market

IC designer sureCore announced an agreement with UK-based RRAM developer Intrinsic to bring high-performance embedded RRAM to market. The two companies will deliver commercial memory solutions using sureCore’s patented memory architectures and Intrinsic’s novel RRAM cell.

Using a combination of Intrinsic’s CMOS compatible technology and sureCore’s high-performance, low power memory architectures will enable an accelerated development process and delivery of this new embedded non-volatile memory to be realised.

RRAM developer Intrinsic raises $1.85 million

UK-based RRAM developer Intrinsic Semiconductor Technologies (Intrinsic) announced it closed a $1.85 million seed funding round, led by investors UCL Technology Fund and IP Group plc. The company will use the funds to develop prototypes of its RRAM memory devices on 300 mm silicon wafers in collaboration with imec.

Intrinsic was spun-off from the University College London (UCL) in 2017. The UCL Technology Fund is now supporting this next stage in the company's life.

Weebit Nano raises a further $12 million AUD to accelerate its R&D and commercialization

Israel-based RRAM developer Weebit Nano announced it has raised $12 million AUD in its recent placement. The company says that its new funds will enable it to accelerate its commercialisation initiatives, including strengthening its technology, engineering and sales teams and increasing marketing activities in the embedded memory market. A non-underwritten share purchase plan to raise up to $3 million will be offered to eligible shareholders on the same terms as the Placement.

Weebit packaged RRAM chip photo

Weebit says it remains on track to achieve its first commercial agreement by mid-2021. Weebit Nano will also be able to accelerate the next phase of standalone memory development across both the technical and commercial aspects to fast track deployment, whilst also developing the next generation of its neuromorphic demo.

Researchers use graphene to enhance perovskite memristor devices

Researchers from the University of Groningen combined graphene with a perovskite ferroelectric material to design a new memristor device.

Graphene and perovskite ferroelectric memristor design (University of Groningen)

In the device, a graphene strip was placed on top of a flake of STO (strontium titanium oxide perovskite). The graphene strip addition enabled the usage of the STO material at higher temperatures than before. This research creates new insights into the adoption of STO materials in memristor devices.

Dialog Semi to license its CBRAM memory technology to GlobalFoundries

Dialog Semiconductor announced that it has has entered into an agreement with GlobalFoundries in which Dialog licenses its Conductive Bridging RAM (CBRAM) technology to GF. Dialog's RRAM technology was pioneered by Adesto Technologies which was recently acquired by Dialog Semiconductor in 2020.

GF will first offer Dialog’s CBRAM as an embedded, non-volatile memory (NVM) option on its 22FDX platform, with the plan to extend to other platforms. Dialog’s proprietary and production proven CBRAM technology is a low power NVM solution designed to enable a range of applications from IoT and 5G connectivity to artificial intelligence (AI).