Used egg shells used to create RRAM devices

Jan 21, 2017

Researchers from the Guizhou Institute of Technology in China produced RRAM devices using finely ground used egg shells. These devices were not very durable - they only lasted about 100 write cycles...

To create the devices, the researchers ground the egg shells until they got a 'nanoscale' powder. They then dried it and dissolved it in a solution. The solution was than used to coat a substrate to form the electrolyte part of the RRAM device.

Researchers turn RRAM chips into extremely fast logic processors

Jan 04, 2017

A team of international researchers, from China (Nanyang Technological University), Singapore (NTU) and Germany (RWTH Aachen University and Forschungszentrum Juelich) developed a technique to turn RRAM chips into logic processors.

The researchers say that these kind of processors eliminate the need to transfer data between memory storage and the computational unit (as it is now the same unit) - and so these processors could be at least two times faster than current processors. The new processors will also be smaller than current designs.

KAIST researchers deposit RRAM on SSG to create a security memory device that rapidly dissolves in water

Dec 25, 2016

Researchers from the Korea Advanced Institute of Science and Technology (KAIST) developed a security RRAM device that can be dissolved in water in less than 10 seconds. The idea, it seems, is that this kind of device can be disposed of quickly and safely.

Soluble RRAM device (KAIST)

The RRAM device was produced on a solid sodium glycerine (SSG) substrate, which is water soluble. The RRAM chip itself was deposited using an inkjet-printer.

Leti researchers look into RRAM endurance, window margin and retention

Dec 10, 2016

Researchers from Leti presented a new paper that clarified for the first time the correlation between endurance, window margin and retention of RRAM. The researchers advice ways module these three key properties, in different RRAM types.

Each RRAM type and base material has a different "sweet spot" that offers the best performance in all three categories. Using modelling the researchers were able to address various non-volatile memory applications, targeting high speed, high endurance or high stability.

Adesto launches a new range of secure RRAM chips for IoT applications

Dec 09, 2016

Adesto Technologies announced a new family of ultra-low power serial EEPROM memory based on its CBRAM RRAM technology aimed towards IoT devices. The Mavriq DS (which stands for Digital Security) offers low-power operation, excellent endurance and special security features.

Adesto CBRAM chips

Adesto says that its new chips performs read and write operations with 4x less power than competitive solutions, and, in ultra-deep power down mode, uses as much as 50x less power. DS devices can automatically enter the ultra-deep power down mode following write operations, reducing controller operations and overall system energy. The mavriq DS supports over 100,000 write cycles across the full temperature and voltage range.

4DS Memory announces it achieved a key endurance milestone

Dec 07, 2016

4DS Memory logoUS-based RRAM developer 4DS Memory announced that it has measured the endurance yield of more than 1,000 cells of five different cell sizes on two different wafers, and more than 97% of the memory cells tested achieved the required endurance goal, significantly exceeding the target of 90% endurance yield.

4DS recently announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital. The company also successfully completed a placement of $3 million USD.