Recent RRAM News - Page 2

China-based OLED producer Visionox, together with Sunrise Display Microelectronics and Hefei Reliance Memory, developed the world's firs AMOLED device driver that is powered by RRAM memory. 

All AMOLED drivers on the market use a combination of SRAM memory, OTP (one-time programmable memory) and external Flash memory (for non-volatile memory), mostly to perform the Demura compensation function. The RRAM memory enables lower cost of production, higher efficiency - and smaller area.

Researchers from The University of California, Berkeley, designed a new versatile compact RRAM model that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). 

The researchers say that their new model unifies the switching mechanisms of these RRAMs into a single framework. The researchers showcase the model’s accuracy in reproducing published experimental device DC and transient characteristics of various RRAM structures. They also demonstrated the model’s efficacy in capturing RRAM variability and conducting 1T1R circuit simulations.

Nuvoton Technology launched the M2L31, a new energy-efficient microcontroller, that features up to 512Kb of high-performance low-power non-volatile RRAM.

The M2L31 is based on an Arm Cortex-M23 core (up to 72Mhz), and is designed to meet the growing demand for sustainable high-performance embedded computing power. Nuvoton explains that a main contributor to the high efficiency of the new chip is its choice of memory, an on-chip RRAM instead of flash memory that draws less power and can be written to without an erase cycle beforehand.

Israel-based RRAM developer Weebit Nano announced a new partnership with Efabless, a creator platform for semiconductor chips, to enable faster and more cost-effective prototype creation of new System-on-Chip (SoC) designs using Weebit’s RRAM technology.

The agreement provides Efabless’ thousands of users and customers with access to Weebit’s IP, which can be incorporated into their designs manufactured using SkyWater Technology Foundry’s 130nm CMOS process. Weebit’s RRAM technology is already proven and qualified up to 125C in SkyWater Technology’s US production fab.

In 2017, Australia-based RRAM developer 4DS Memory signed an agreement with Belgium-based IMEC to develop a transferable manufacturing process for its technology. 4DS now announced that it has renewed its R&D collaboration with the IMEC research institute after receiving positive results from its fourth lot of test chips.

4DS will pay IMEC 1.92 million Euro for the activities in 2024, and the company expects IME to deliver its 5th and 6th batch of 1 Mbit array chips in Q3 2024. The 6th batch will be based on a 20 nm process. 

Australia-based RRAM developer 4DS Memory announced a new type of RRAM technology specifically for AI processing, that enables high-bandwidth, high-endurance persistent memory for big data and neural net applications.

4DS says that as its RRAM requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window, it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age.

ByteDance (owner of TikTok) invested in InnoStar, a Shanghai-based RRAM developer established in 2019. ByteDance, through its Picoheart subsidiary, now holds a 9.5% share in InnoStar, making it the company's third largest stakeholder, after Memris Asia Pacific (28.8%) and Shanghai Alliance (26.3%). 

Picoheart is ByteDance's VR developer, which means that ByteDance likely hopes to adopt RRAM technology in future VR headsets.

US-based Tetramem published a paper that shows its form of RRAM-powered analog computing is capable of executing calculations with arbitrary precision. It says the ability to perform high-precision multiplication within single electronic devices that can be readily formed in arrays offers scope to reduce the power consumption of machine learning when based on artificial neural networks.

The Tetramem device is made of a mixture of Al3O2, above a layer of HfO2 sandwiched between a tantalum/titanium top electrode and a platinum bottom electrode. Each of the bilayers is less than 1nm thick so that after being laid down they appear to form a mixed layer rather than two separate continuous layers. The device was fabricated in a 240-nm diameter via above the CMOS peripheral circuitry.

Israel-based RRAM developer Weebit Nano announced that it has received the first wafers integrating its
embedded RRAM memory manufactured in GlobalFoundries’ 22FDX platform. Initial tests of the wafers in this advanced 22nm FD-SOI (fully depleted silicon on insulator) are showing positive results on the array.

Weebit says that these are the first wafers with Weebit ReRAM manufactured in 22nm, one of the industry’s most
steadfast process nodes, and a geometry where embedded flash is not viable. 

Infineon Technologies has unveiled a new family of microcontrollers in its PSoC portfolio of Arm Cortex-based high-performance, low-power, secured devices, the PSoC Edge, designed for next generation responsive compute and control applications.

The new PSoC Edge family features hardware-assisted machine learning (ML) and are based on Arm Cortex-M55, including Helium DSP support paired with Arm Ethos-U55 and Cortex-M33 paired with Infineon’s ultra-low power NNLite  hardware accelerator. The family of devices also come with extended on-chip memories, including non-volatile RRAM, as well as high speed, secured external memory support.