Researchers use ALD coating tech to successfully deposit RRAM functional layers

Jun 28, 2017

Researchers at Moscow's Institute of Physics and Technology (MIPT) developed a method of depositing the functional layers of an RRAM memory cell using high quality ALD coating. The researchers report that ALD enables a controllable growth of oxygen deficient oxides.

The MIPT researchers used production-proven ALD equipment made by Picosun. The researchers now want to see whether the ALD process can be scaled to an industrial-scale production process.

New RRAM book: In Search of the Next Memory: Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories

This book aims to provide an introduction to promising emerging memories under development. The book's target audience is the chip designer, and it offers expanded, up-to-date coverage of emerging memories circuit design.

The book covers four main next-gen technologies: RRAM, MRAM, FeRAM and PCRAM and explores the array organization, sensing and writing circuitry, programming algorithms and error correction techniques.

Researchers produce a CBRAM device using only a standard inkjet printer

Apr 07, 2017

Researchers from the Munich University of Applied Sciences in Germany managed to produce RRAM (CBRAM) devices using a standard inkjet printer (FujiFilm Dimatix DMP 2831) without any additional processing steps such as electroplating or lithography. The researchers say that the memory devices have a performance comparable to regular RRAM devices created in a clean-room process.

To create these memory cells, the researchers used three different inks: silver nanoparticles, spin-on-glass (liquid glass) and PEDOT:PSS. The silver created the conductive layer, the spin-on-glass was the insulating layer and the PEDOT:PSS was also used to create conductive layers. The memory device was printed on a cheap and flexible plastic foil.

hexagonal-BN enables 2D RRAM devices

Mar 10, 2017

Researchers from Soochow University in China in collaboration with researchers form Harvard, Stanford and MIT developed RRAM memory devices using multilayer hexagonal boron nitride (h-BN) as dielectric. The devices show promising performance - while being based on a 2D material, which may pave the way towards extremely thin and efficient memory devices.

h-BN enables a 2D RRAM device image

2D materials (such as h-BN and others) are interesting to many researchers, and the field is experiencing a boom following the "discovery" of graphene in 2004.