RRAM News - Page 1

Applied Materials unveiled new high-volume manufacturing solutions for next-generation memories - Including MRAM, PCRAM and RRAM. The Endura platform integrates multiple materials engineering technologies along with on-board metrology to create new films and structures.

Applied’s Endura Impulse PVD platform for PCRAM and ReRAM production includes up to nine process chambers integrated under vacuum along with on-board metrology to allow the precise deposition and control of the multi-component materials for these emerging memories.

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Israel-based RRAM developer Weebit Nano announced that its partner Leti has perform retention and endurance tests on its SiOx RRAM technology - and found it to be "at the forefront of the market".
Weebit says that its RRAM demonstrated retention of over 10 years at 130-150 degrees (these high temperatures could enable its RRAM to target the demanding automotive market). Leti also found that a single SiOx RRAM cell endured a million cycles

A new AI consortium was announced that aims to deliver a vastly accelerated, power-saving AI platform and standard that enables new AI-rich capability for edge computing, gateways, cloud and data centers. The idea is to combine advanced acceleration hardware, resistive memory (RRAM) and optimized neural networks to create "ready-made, power-efficient solutions with unsupervised learning and event recognition capability".

The SCAiLE (SCalable AI for Learning at the Edge) consortium is already working with Japanese authorities to review opportunities for the 2020 Olympics, including video-based event detection and response capability. The consortium members include RRAM developer Crossbar and AI accelerator startup Gyrfalcon Technology, which recently announced the commercial availability of its LightSpeeur 2802M AI ASIC that include TSMC's eMRAM memory.

Israel-based SiOx RRAM developer Weebit Nano has signed an agreement to collaborate with the Technion Institute in Israel. Weebit will work together with a team of researchers to examine the possible use of ReRAM devices in processing-in-memory that could speed up processing, memory transfer rate and memory bandwidth and decrease processing latency – while using less power.

Weebit and the Technion will also perform characterisation and implementation of logic operations using Weebit’s RRAM test chips, demonstrating basic logic operations on a RRAM array

Israel-based SiOx RRAM developer Weebit Nano launched a joint Neuromorphic ReRAM project with
Politecnico di Milano (Polimi). Weebit Nano's team will collaborate with researchers from the Poltecnico to test, characterize and implement its developed algorithms using Weebit’s ReRAM chip. The goal of the project is to demonstrate the capability of ReRAM-based hardware in neuromorphic and artificial intelligence applications.

This is the second Neuromorphic RRAM project that Weebit launches - only recently in November 2018 it announced that it will partner in a similar project with the Non-Volatile Memory Research Group of the Indian Institute of Technology Delhi (IITD).

Weebit Nano reported successful endurance results of its ReRAM cells as a key step towards moving to 300mm wafers at 28nm. Weebit says that its ReRAM cells demonstrated stable voltage levels and endurance, at levels competitive to production non-volatile memories.

Weebit, together with its partner Leti, performed the tests which demonstrated Array-level endurance above 100,000 cycles. The company says that final characterisation will continue over coming weeks on array performance and extended endurance and retention in preparation for the migration to 300mm wafers at 28nm.