Weebit Nano produced a 1Mb RRAM array at 40 nm

Weebit Nano logoIsrael-based SiOx RRAM developer Weebit Nano announced that it produced a 1Mb array of its silicon-oxide ReRAM at 40nm. The 1Mb initial tests, conducted in CEA/Leti facilities in Grenoble, France, demonstrated the capability of addressing and programming nearly all of the memory cells.

Last month Weebit and Leti extended their co-development agreement. In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technolgoy and business.

Posted: Jun 25,2018 by Ron Mertens