Weebit Nano announced that electrical tests conducted on its SiOx RRAM at the Leti institute in France has been succesful. Leti performed extensive testing on critical memory parameters such as programming and erase voltage.
Weebit further says that it is now able to move forward with its plans to scale down the RRAM technology to 40nm.
Weebit partnered with Leti in September 2016, and in November 2016 Weebit announced that its ReRAM memory technology has been successfully transferred from Rice University’s facilities to Leti’s pre-industrialisation facility in Grenoble, France.
A couple of months ago, we reported that Israel-based RRAM developer Weebit Nano partnered with France-based research institute Leti, to co-develop advanced RRAM devices based on silicon oxide. The primary milestone of the joint Weebit-Leti project is to develop a 1,000 bit array, followed by the development of a 1-million-bit array.