Weebit announces successful electrical tests at the Leti Institute

Weebit Nano announced that electrical tests conducted on its SiOx RRAM at the Leti institute in France has been succesful. Leti performed extensive testing on critical memory parameters such as programming and erase voltage.

Weebit further says that it is now able to move forward with its plans to scale down the RRAM technology to 40nm.

Weebit partnered with Leti to co-develop advanced RRAM devices based on silicon oxide in September 2016, and in November 2016 Weebit announced that its ReRAM memory technology has been successfully transferred from Rice University’s facilities to Leti’s pre-industrialisation facility in Grenoble, France. The primary milestone of the joint Weebit-Leti project is to develop a 1,000 bit array, followed by the development of a 1-million-bit array.

Posted: Mar 25,2017 by Ron Mertens