Weebit Nano raised $3.1 million, aims to transfer to production capacity by end of 2020

Israel-based RRAM developer Weebit Nano Announced that it secured $3.1 million in a combined placement and entitlement offer. The company has also announced that it is progressing in its project to develop a customized ReRAM memory module for its South Korean customer - and aims to to deliver the module in mid-2020.

Weebit packaged RRAM chip photo

Weebit says that it aims to transfer its facilities to production capacity by the end of 2020.

Read the full story Posted: Oct 31,2019

Weebit and XTX Technology to jointly investigate ways to use Weebit’s SiOx ReRAM technology in XTX products

Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter of intent with China-based memory solution provider XTX Technology to investigating ways in which XTX can use Weebit’s technology in its products.

Weebit Nano RRAM chip prototypes photo

XTX supplies flash memory based solutions to about 2,00 customers, including leading global semiconductor companies. XTX believes that Weebit’s SiOx ReRAM technology has the potential to be a strong fit for the company's needs.

Read the full story Posted: Aug 21,2019

Weebit is adapting its RRAM technology to meet a Tier-2 customer unique memory requirements

Israel-based RRAM developer Weebit Nano announced that it is in "advanced discussions" with a Tier-2 company to adapt Weebit's technology to meet the customer's unique memory module requirements.

Weebit packaged RRAM chip photoWeebit Nano also announced that it has signed an agreement with Kitec Design that will be Weebit's representative in South Korea, Weebit's most important market (as Korea produces 57% of the global memory chip supply). Weebit is already engaging with several potential customers in Korea, including the Tier-2 company.

Read the full story Posted: Jul 24,2019

Leti tests Weebit's RRAM chips for endurance and retention

Israel-based RRAM developer Weebit Nano announced that its partner Leti has perform retention and endurance tests on its SiOx RRAM technology - and found it to be "at the forefront of the market".
Weebit packaged RRAM chip photoWeebit says that its RRAM demonstrated retention of over 10 years at 130-150 degrees (these high temperatures could enable its RRAM to target the demanding automotive market). Leti also found that a single SiOx RRAM cell endured a million cycles

Read the full story Posted: May 01,2019

Weebit announced a collaboration project with the Technion Institue in Israel

Israel-based SiOx RRAM developer Weebit Nano has signed an agreement to collaborate with the Technion Institute in Israel. Weebit will work together with a team of researchers to examine the possible use of ReRAM devices in processing-in-memory that could speed up processing, memory transfer rate and memory bandwidth and decrease processing latency – while using less power.

Weebit Nano RRAM chip prototypes photo

Weebit and the Technion will also perform characterisation and implementation of logic operations using Weebit’s RRAM test chips, demonstrating basic logic operations on a RRAM array

Read the full story Posted: Feb 13,2019

Weebit Nano to collaboare with the Politecnico di Milano on a Neuromorphic AI project

Israel-based SiOx RRAM developer Weebit Nano launched a joint Neuromorphic ReRAM project with
Politecnico di Milano (Polimi). Weebit Nano's team will collaborate with researchers from the Poltecnico to test, characterize and implement its developed algorithms using Weebit’s ReRAM chip. The goal of the project is to demonstrate the capability of ReRAM-based hardware in neuromorphic and artificial intelligence applications.

This is the second Neuromorphic RRAM project that Weebit launches - only recently in November 2018 it announced that it will partner in a similar project with the Non-Volatile Memory Research Group of the Indian Institute of Technology Delhi (IITD).

Read the full story Posted: Jan 20,2019

Weebit Nano reports successful endurance results of its ReRAM cells

Weebit Nano reported successful endurance results of its ReRAM cells as a key step towards moving to 300mm wafers at 28nm. Weebit says that its ReRAM cells demonstrated stable voltage levels and endurance, at levels competitive to production non-volatile memories.

Weebit, together with its partner Leti, performed the tests which demonstrated Array-level endurance above 100,000 cycles. The company says that final characterisation will continue over coming weeks on array performance and extended endurance and retention in preparation for the migration to 300mm wafers at 28nm.

Read the full story Posted: Jan 14,2019

Weebit Nano and Silvaco to co-develop ReRAM models and design tools

Israel-based SiOx RRAM developer Weebit Nano announced a new development program partnership with chip-design software developer Silvaco to develop a Technology Computer-Aided Design (TCAD) solution to accurately model the electrical behavior of Weebit Nano’s ReRAM devices.

Weebit Nano RRAM chip prototypes photo

Weebit says that this new collaboration will accelerate the incorporation of Weebit Nano’s ReRAM modules into advanced semiconductor designs. Silvaco will use the developed model as the basis for creating a TCAD solution for joint customers employing ReRAM technology.

Read the full story Posted: Jan 09,2019

Leti to assist Weebit Nano to move its RRAM to 300 mm wafers and 28 nm technologies

Israel-based RRAM developer Weebit Nano announced that its partnership with Leti continues, and Leti and Weebit extended the partnership to include adapting Weebit's RRAM production process to 300 mm wafers, at 28 nm.
Weebit packaged RRAM chip photoUp until now Leti and Weebit's development was done on 200 mm wafers using 40 nm technology. Weebit believes that the move to 300 mm and 28 nm will be quick - and it will be done by the end of Q4 2019. The move to 28 nm will improve Weebit's RRAM cells and enable them to fit even the smallest geometries being used in the market today.

Read the full story Posted: Dec 21,2018

Weebit Nano to partner with the Indian Institute of Technology Delhi on a Neuromorphic RRAM project

Israel-based SiOx RRAM developer Weebit Nano announced that it will partner with the Non-Volatile Memory Research Group of the Indian Institute of Technology Delhi (IITD) to work jointly on a Neuromorphic RRAM project.
Weebit packaged RRAM chip photoThe NVMRG group will research the use of Weebit Nano’s SiOx RRAM technology for certain types of neuromorphic applications, which are used for artificial intelligence. RRAM devices are very promising candidates for enabling high-density and ultimately scaled synaptic arrays in neuromorphic architectures as they are significantly smaller and more energy efficient than current AI data centers, and mimic the brain’s biological computation at the neuron and synaptic level.

Read the full story Posted: Nov 14,2018