Weebit Nano and Silvaco to co-develop ReRAM models and design tools

Israel-based SiOx RRAM developer Weebit Nano announced a new development program partnership with chip-design software developer Silvaco to develop a Technology Computer-Aided Design (TCAD) solution to accurately model the electrical behavior of Weebit Nano’s ReRAM devices.

Weebit Nano RRAM chip prototypes photo

Weebit says that this new collaboration will accelerate the incorporation of Weebit Nano’s ReRAM modules into advanced semiconductor designs. Silvaco will use the developed model as the basis for creating a TCAD solution for joint customers employing ReRAM technology.

Read the full story Posted: Jan 09,2019

Leti to assist Weebit Nano to move its RRAM to 300 mm wafers and 28 nm technologies

Israel-based RRAM developer Weebit Nano announced that its partnership with Leti continues, and Leti and Weebit extended the partnership to include adapting Weebit's RRAM production process to 300 mm wafers, at 28 nm.
Weebit packaged RRAM chip photoUp until now Leti and Weebit's development was done on 200 mm wafers using 40 nm technology. Weebit believes that the move to 300 mm and 28 nm will be quick - and it will be done by the end of Q4 2019. The move to 28 nm will improve Weebit's RRAM cells and enable them to fit even the smallest geometries being used in the market today.

Read the full story Posted: Dec 21,2018

Weebit Nano packaged its RRAM chips for the first time

Israel-based SiOx RRAM developer Weebit Nano announced that it has packaged its first memory devices into chips, which can now be shipped to its partners. The company says that its first RRAM memory will be delivered to universities to research the use of ReRAM technology in neuromorphic computing.

Weebit packaged RRAM chip photo

Additional chips are planned to be shipped to commercial partners once they engage to explore the possibility to work with Weebit Nano’s technology.

Read the full story Posted: Sep 02,2018

Weebit announced working 40nm SiOx RRAM cell samples

Earlier this year, Weebit Nano announced that it aims to produce 40nm working SiOx RRAM cell samples by the end of 2017, and the company today announced that it achieved that milestone - one month ahead of schedule.

Weebit further reports that measurements performed on the 40nm memory cells on various wafers verified the ability of Weebit Nano SiOx ReRAM cells to maintain its memory behaviour in accordance with previous experiments performed on 300nm cells.

Read the full story Posted: Nov 28,2017

Weebit successfully demonstrated the reliability and endurance of its 300 nm 4Kb RRAM memory cells

Israel-based SiOx RRAM developer Weebit Nano recently announced success in demonstrating a 4Kbit array in 300nm. Weebit now updates that it has successfully demonstrated the reliability of data retention and endurance in its 300 nm 4Kb memory cells. data retention lifetime extrapolation demonstrated the ability to maintain written data for 10 years at above room temperature. In addition the chips maintained their data after 30 minutes at 260 degrees, exceeding the soldering requirements of 15 minutes at that temperatures.

Weebit Nano RRAM chip prototypes photo

Weebit says that these results successfully conclude the 300 nm 4Kb characterization. Weebit says that the endurance results are significantly higher than the program/erase cycling of existing Flash technology.

Read the full story Posted: Nov 14,2017