Weebit Nano demonstrated a 300 nm 4Kb Silicon Oxide RRAM cell

Weebit Nano announced that it has managed to produce a 4Kb array on 300 nm cells, with 100% yield on selected arrays. Weebit says that this result validates its technology and that this demonstration was the final significant step towards the next goal for the company - a 40nm RRAM Silicon Oxide working cell by the end of 2017.

Data saved in Weebit Nano's 300nm 4Kbit array (Reset cells in orange)

Preliminary speed tests of Weebit's technology showed that write speeds could be 100 to 1000 times faster than traditional 3D Flash technology while using significantly lower energy.

Researchers combine RRAM and logic in a single 3D CNT chip

Researhcers at Stanford and MIT developed a new 3D chip fabrication method that combines a CNT-based processor with RRAM memory cells. This technology can be used to create 3D chip architectures in a way that is not possible with silicon-based chips.

Both CNT-based logic and RRAM memory components can be deposited at relatively low temperatures (around 200 degrees Celsius) as opposed to silicon which requires 1,000 degrees to deposit. This means that you can place one layer on top of the other without damaging either layers.

Researchers produce a CBRAM device using only a standard inkjet printer

Researchers from the Munich University of Applied Sciences in Germany managed to produce RRAM (CBRAM) devices using a standard inkjet printer (FujiFilm Dimatix DMP 2831) without any additional processing steps such as electroplating or lithography. The researchers say that the memory devices have a performance comparable to regular RRAM devices created in a clean-room process.

To create these memory cells, the researchers used three different inks: silver nanoparticles, spin-on-glass (liquid glass) and PEDOT:PSS. The silver created the conductive layer, the spin-on-glass was the insulating layer and the PEDOT:PSS was also used to create conductive layers. The memory device was printed on a cheap and flexible plastic foil.

hexagonal-BN enables 2D RRAM devices

Researchers from Soochow University in China in collaboration with researchers form Harvard, Stanford and MIT developed RRAM memory devices using multilayer hexagonal boron nitride (h-BN) as dielectric. The devices show promising performance - while being based on a 2D material, which may pave the way towards extremely thin and efficient memory devices.

h-BN enables a 2D RRAM device image

2D materials (such as h-BN and others) are interesting to many researchers, and the field is experiencing a boom following the "discovery" of graphene in 2004.

Used egg shells used to create RRAM devices

Researchers from the Guizhou Institute of Technology in China produced RRAM devices using finely ground used egg shells. These devices were not very durable - they only lasted about 100 write cycles...

To create the devices, the researchers ground the egg shells until they got a 'nanoscale' powder. They then dried it and dissolved it in a solution. The solution was than used to coat a substrate to form the electrolyte part of the RRAM device.

Researchers turn RRAM chips into extremely fast logic processors

A team of international researchers, from China (Nanyang Technological University), Singapore (NTU) and Germany (RWTH Aachen University and Forschungszentrum Juelich) developed a technique to turn RRAM chips into logic processors.

The researchers say that these kind of processors eliminate the need to transfer data between memory storage and the computational unit (as it is now the same unit) - and so these processors could be at least two times faster than current processors. The new processors will also be smaller than current designs.

KAIST researchers deposit RRAM on SSG to create a security memory device that rapidly dissolves in water

Researchers from the Korea Advanced Institute of Science and Technology (KAIST) developed a security RRAM device that can be dissolved in water in less than 10 seconds. The idea, it seems, is that this kind of device can be disposed of quickly and safely.

Soluble RRAM device (KAIST)

The RRAM device was produced on a solid sodium glycerine (SSG) substrate, which is water soluble. The RRAM chip itself was deposited using an inkjet-printer.

Leti researchers look into RRAM endurance, window margin and retention

Researchers from Leti presented a new paper that clarified for the first time the correlation between endurance, window margin and retention of RRAM. The researchers advice ways module these three key properties, in different RRAM types.

Each RRAM type and base material has a different "sweet spot" that offers the best performance in all three categories. Using modelling the researchers were able to address various non-volatile memory applications, targeting high speed, high endurance or high stability.

4DS Memory announces it achieved a key endurance milestone

4DS Memory logoUS-based RRAM developer 4DS Memory announced that it has measured the endurance yield of more than 1,000 cells of five different cell sizes on two different wafers, and more than 97% of the memory cells tested achieved the required endurance goal, significantly exceeding the target of 90% endurance yield.

4DS recently announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital. The company also successfully completed a placement of $3 million USD.