Israel-based RRAM developer Weebit Nano raised $25.7 million AUD from four Israeli institutional investment and pension funds. The company also announced a pro rata non-renounceable Entitlement Offer to raise a further $9 million AUD.
The company provided shares at $2.84 AUD per share, which represents a 11.5% discount to the last closing price on 8 November 2021.
UK-based RRAM developer Intrinsic Semiconductor Technologies (Intrinsic) announced it closed a $1.85 million seed funding round, led by investors UCL Technology Fund and IP Group plc. The company will use the funds to develop prototypes of its RRAM memory devices on 300 mm silicon wafers in collaboration with imec.
Intrinsic was spun-off from the University College London (UCL) in 2017. The UCL Technology Fund is now supporting this next stage in the company's life.
Israel-based RRAM developer Weebit Nano announced it has raised $12 million AUD in its recent placement. The company says that its new funds will enable it to accelerate its commercialisation initiatives, including strengthening its technology, engineering and sales teams and increasing marketing activities in the embedded memory market. A non-underwritten share purchase plan to raise up to $3 million will be offered to eligible shareholders on the same terms as the Placement.
Weebit says it remains on track to achieve its first commercial agreement by mid-2021. Weebit Nano will also be able to accelerate the next phase of standalone memory development across both the technical and commercial aspects to fast track deployment, whilst also developing the next generation of its neuromorphic demo.
Australia-based RRAM developer 4DS Memory announced that it has raised a total of $7.6 million AUD ($5.45 million USD) in two financing round.
4DS Memory says that it will use the funds to further develop its Interface Switching ReRAM technology with imec and Western Digital's subsidiary, HGST.
Israel-based RRAM developer Weebit Nano announced it has raised $6.6 million AUD via a two-tranche placement. The funds will be used to complete its memory module development, transfer the technology to a production fab and continue its work on discrete RRAM memory technology.
Weebit says that the placement was priced at a discount of around 22% to its current share price. The company now hopes to accelerate its development work and make up lost time from the COVID-19 shutdown.
Singapore's Nanyang Technological University (NTU Singapore) and GlobalFoundries announced a partnership to jointly research next-generation RRAM memories. The two partners will invest $88 million USD with an aim to demonstrate RRAM memory devices produced on 12-inch wafers.
NTU and GF-Singapore are already collaborating on spintronics - the study of electron spin and its applications, including MRAM memory (NTU and GF are founding members of the Singapore Spintronics Consortium. In this new ReRAM project, 16 researchers will work together to research areas such as circuit design for next-generation smart devices and chip packaging for advanced IoT applications.
Strategic Elements announces that it has received financial support from the Australian government to extend the development of its Nanocube RRAM memory ink with CSIRO. The $100,00 grant will be co-funded by the government and SER.
The program of work at CSIRO is expected to be conducted over a 12-week period, and SER will make progress updates where appropriate.
Israel-based SiOx RRAM developer Weebit Nano has raised $3 million AUD ($2.16 million USD) via a share placement and the company also plans to raise a further $1 million soon. Weebit's board of directors invested $150,000 as part of this placement.
Weebit recently announced that it has packaged its first memory devices into chips, which can now be shipped to its partners. The first RRAM memory will be delivered to universities to research the use of ReRAM technology in neuromorphic computing, and additional chips are planned to be shipped to commercial partners.
Strategic Elements announces an updates regarding its Memory Ink project status - and said that it has recently tested its spin-coated Memory Ink device (based on a glass substrate and silver electrodes). The tests, performed at UNSW, were successful and 100% of the memory cells operated successfully and showed "suitable" endurance.
SER is working with CSIRO, which reproduced the tests done at UNSW successfully - although the endurance results achieved at UNSW could not be repeated. SER will continue to work with UNSW to understand the variability in process and results. The company is also looking into a collaboration with VTT Finland.
Australia-based RRAM developer 4DS Memory announced the successful completion of a placement of $4 million AUD (about $3 million USD). 4DS says that the placement was significantly oversubscribers and the proceedings will be used to fund 4DS' ongoing RRAM development activities.
A few days ago 4DS announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital.