Automotive

Researchers at China's Tsinghua University, together with InnoMem Technologies, have developed a 16Mb embedded RRAM device with a hybrid array structure, built on a 28 nm process, that is highly suited for automotive OTA update applications.

The researchers say that the new 1T1R/2T2R hybrid array structure design enhances the reliability and system compatibility. The researcher used several technologies to increase performance - a load balancing approach to address the IR-drop issue and improve cell uniformity, and a hierarchical column selection strategy to suppress the leakage current in the write path, optimizing write operations at high temperature.

TSMC is launching its first design center in Europe, with a focus on memory technologies for automotive applications. 

The company announced that it will start developing 6-nm embedded RRAM technologies, to complement its 28-nm (already qualified), 12-nm (planned). TSMC is targeting high-end automotive applications, specifically AI chips and technologies. It will also start developing 5-nm MRAM chips.

Israel-based RRAM developer Weebit Nano has taped-out demonstration chips integrating its embedded ReRAM module to SkyWater Technology’s foundry. Weebit signed the agreement with SkyWater in September 2021 to transfer its technology to SkyWater's fab.

This is the first tape-out of Weebit's technology to a production fabrication. The technology will be available on SkyWater’s 130nm CMOS process, which is suitable for applications such as analog, power management, automotive, IoT and medical. Weebit says that its chips are designed with unique patent-pending analog and digital smart circuitry running smart algorithms, thereby significantly enhancing the memory array’s technical parameters

Israel-based RRAM developer Weebit Nano announced that its partner Leti has perform retention and endurance tests on its SiOx RRAM technology - and found it to be "at the forefront of the market".
Weebit says that its RRAM demonstrated retention of over 10 years at 130-150 degrees (these high temperatures could enable its RRAM to target the demanding automotive market). Leti also found that a single SiOx RRAM cell endured a million cycles