Stanford researchers discover that filmanet RRAM may be more efficient than previously thought

Researchers from Stanford University are studying filament RRAM technologies to discover the fundamental behavior of these memory cells. The research team built a tool to measure the basic forces that make RRAM chips work - especially the heat requirements for RRAM switching.

Using micro thermal stage (MTS) devices, RRAM chips were studied under a wide range of temperatures, to try and find the exact temperature in which RRAM switching occurs. It was discovered that operating at 80 to 260 F is more efficient than the higher temperatures people thought were more efficient.

This is an exciting discovered (that still has to be confirmed, though) as it could lead to chips that operate at lower temperatures - and will so be more efficient as less energy will be required to do the switching.

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Posted: Dec 06,2016 by Ron Mertens