Researchers at the Chinese Academy of Sciences developed a new cation-based RRAM device in which a single layer graphene was used as an ion barrier. Experiments indicate that this device is more reliable than previous RRAM designs while still maintaining high performance.
This work follows a recent discovery by the research group that there is a competition between the SET and RESET process in cation-based RRAM, which causes failure of reset operation in the RRAM device. The researchers found that the active metal which forms a conductive filament can diffuse into the Pt electrode under the action of an electric field, and form an additional active metal source in Pt electrode, which caused the failure of reset operation. Using graphene as an ion barrier is a solution to this problem.