Researchers from Taiwan's National Cheng Kung University developed RRAM memory based on lead-free Na0.5K0.5NbO3/HfO perovskite materials. The researchers fabricated a device using low-temperature sputtering, and report high performance and excellent process compatibility.
The researchers say that the new device exhibits forming-free switching, low operating voltages (−1 V/1.5 V), a high ON/OFF ratio of ∼200, and endurance exceeding 105 cycles.
Neuromorphic characteristics were further demonstrated, with the device showing long-term potentiation/depression (LTP/LTD) and highly symmetric spike-timing-dependent plasticity (STDP). Hardware-aware simulations confirmed an accuracy of over 95% for a CNN on the MNIST dataset, while an SNN driven by the experimentally fitted STDP parameters achieved 96.7% accuracy.
