Researhcers at Stanford and MIT developed a new 3D chip fabrication method that combines a CNT-based processor with RRAM memory cells. This technology can be used to create 3D chip architectures in a way that is not possible with silicon-based chips.

Both CNT-based logic and RRAM memory components can be deposited at relatively low temperatures (around 200 degrees Celsius) as opposed to silicon which requires 1,000 degrees to deposit. This means that you can place one layer on top of the other without damaging either layers.

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