Researchers at China's Tsinghua University, together with InnoMem Technologies, have developed a 16Mb embedded RRAM device with a hybrid array structure, built on a 28 nm process, that is highly suited for automotive OTA update applications.
The researchers say that the new 1T1R/2T2R hybrid array structure design enhances the reliability and system compatibility. The researcher used several technologies to increase performance - a load balancing approach to address the IR-drop issue and improve cell uniformity, and a hierarchical column selection strategy to suppress the leakage current in the write path, optimizing write operations at high temperature.
The researchers performed reliability tests that demonstrate how the RRAM device achieves 100K cycles and 10 years of retention at 125 degrees Celsius in the 1T1R mode, and at least 200 K cycles and 10 years of retention in the 2T2R mode. This shows the high suitability for automotive OTA scenarios.