InnoMem Technologies develops standalone memory chips, embedded memory IP, and SOC products.
In 2026, researchers at China's Tsinghua University, together with InnoMem Technologies, developed a 16Mb embedded RRAM device with a hybrid array structure, built on a 28 nm process, that is highly suited for automotive OTA update applications.
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InnoMem Technologies and Tsinghua University present 16Mb RRAM suitable for automotive OTA applications
Researchers at China's Tsinghua University, together with InnoMem Technologies, have developed a 16Mb embedded RRAM device with a hybrid array structure, built on a 28 nm process, that is highly suited for automotive OTA update applications.
The researchers say that the new 1T1R/2T2R hybrid array structure design enhances the reliability and system compatibility. The researcher used several technologies to increase performance - a load balancing approach to address the IR-drop issue and improve cell uniformity, and a hierarchical column selection strategy to suppress the leakage current in the write path, optimizing write operations at high temperature.