4DS Memory raised $3 million to fund its RRAM development activities
Australia-based RRAM developer 4DS Memory announced the successful completion of a placement of $4 million AUD (about $3 million USD). 4DS says that the placement was significantly oversubscribers and the proceedings will be used to fund 4DS' ongoing RRAM development activities.
A few days ago 4DS announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital.
4DS developed a working 40nm RRAM memory cell
Australia-based RRAM developer 4DS Memory announced that it developed a working 40nm RRAM memory cells. This was achieved in collaboration with HGST, a subsidiary of Western Digital.
The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. The cells have no filaments and are so easier to scale compared to filamentary RRAM.
