July 2020

4DS raises $5.45 million to further develop its ReRAM technology with imec and HGST

Australia-based RRAM developer 4DS Memory announced that it has raised a total of $7.6 million AUD ($5.45 million USD) in two financing round.

4DS Memory says that it will use the funds to further develop its Interface Switching ReRAM technology with imec and Western Digital's subsidiary, HGST.

Read the full story Posted: Jul 30,2020

New halid perovskite shows promise as an RRAN switching material

Researchers from Korea's Pohang University of Science & Technology (POSTECH) has designed a halide perovskite material for RRAM memory devices. The perovskite material offers low-operating voltage and high-performance resistive switching memory.

The researcher say they have succeeded in designing an optimal halide perovskite material (CsPb2Br5) that can be applied to a ReRAM device by applying first-principles calculation based on quantum mechanics.

Read the full story Posted: Jul 20,2020