March 2017

hexagonal-BN enables 2D RRAM devices

Researchers from Soochow University in China in collaboration with researchers form Harvard, Stanford and MIT developed RRAM memory devices using multilayer hexagonal boron nitride (h-BN) as dielectric. The devices show promising performance - while being based on a 2D material, which may pave the way towards extremely thin and efficient memory devices.

h-BN enables a 2D RRAM device image

2D materials (such as h-BN and others) are interesting to many researchers, and the field is experiencing a boom following the "discovery" of graphene in 2004.

Read the full story Posted: Mar 10,2017

Western Digital licenses ReRAM technology from Rambus

Rambus logoRambus announced that it signed a broad patent license agreement with western digital. The agreement covers the use of several memory technologies - including memory architectures, high speed interfaces, security technologies and ReRAM.

Rambus did not provide any more details, but the agreement will last until 2021 with an option for an additional 5-year extension.

Read the full story Posted: Mar 08,2017