December 2016

KAIST researchers deposit RRAM on SSG to create a security memory device that rapidly dissolves in water

Researchers from the Korea Advanced Institute of Science and Technology (KAIST) developed a security RRAM device that can be dissolved in water in less than 10 seconds. The idea, it seems, is that this kind of device can be disposed of quickly and safely.

Soluble RRAM device (KAIST)

The RRAM device was produced on a solid sodium glycerine (SSG) substrate, which is water soluble. The RRAM chip itself was deposited using an inkjet-printer.

Read the full story Posted: Dec 25,2016

Leti researchers look into RRAM endurance, window margin and retention

Researchers from Leti presented a new paper that clarified for the first time the correlation between endurance, window margin and retention of RRAM. The researchers advice ways module these three key properties, in different RRAM types.

Each RRAM type and base material has a different "sweet spot" that offers the best performance in all three categories. Using modelling the researchers were able to address various non-volatile memory applications, targeting high speed, high endurance or high stability.

Read the full story Posted: Dec 10,2016

Adesto launches a new range of secure RRAM chips for IoT applications

Adesto Technologies announced a new family of ultra-low power serial EEPROM memory based on its CBRAM RRAM technology aimed towards IoT devices. The Mavriq DS (which stands for Digital Security) offers low-power operation, excellent endurance and special security features.

Adesto says that its new chips performs read and write operations with 4x less power than competitive solutions, and, in ultra-deep power down mode, uses as much as 50x less power. DS devices can automatically enter the ultra-deep power down mode following write operations, reducing controller operations and overall system energy. The mavriq DS supports over 100,000 write cycles across the full temperature and voltage range.

Read the full story Posted: Dec 09,2016

4DS Memory announces it achieved a key endurance milestone

US-based RRAM developer 4DS Memory announced that it has measured the endurance yield of more than 1,000 cells of five different cell sizes on two different wafers, and more than 97% of the memory cells tested achieved the required endurance goal, significantly exceeding the target of 90% endurance yield.

4DS recently announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital. The company also successfully completed a placement of $3 million USD.

Read the full story Posted: Dec 07,2016

Stanford researchers discover that filmanet RRAM may be more efficient than previously thought

Researchers from Stanford University are studying filament RRAM technologies to discover the fundamental behavior of these memory cells. The research team built a tool to measure the basic forces that make RRAM chips work - especially the heat requirements for RRAM switching.

Using micro thermal stage (MTS) devices, RRAM chips were studied under a wide range of temperatures, to try and find the exact temperature in which RRAM switching occurs. It was discovered that operating at 80 to 260 F is more efficient than the higher temperatures people thought were more efficient.

Read the full story Posted: Dec 06,2016

Researchers use graphene to improve RRAM's stability

Researchers at the Chinese Academy of Sciences developed a new cation-based RRAM device in which a single layer graphene was used as an ion barrier. Experiments indicate that this device is more reliable than previous RRAM designs while still maintaining high performance.

This work follows a recent discovery by the research group that there is a competition between the SET and RESET process in cation-based RRAM, which causes failure of reset operation in the RRAM device. The researchers found that the active metal which forms a conductive filament can diffuse into the Pt electrode under the action of an electric field, and form an additional active metal source in Pt electrode, which caused the failure of reset operation. Using graphene as an ion barrier is a solution to this problem.

Read the full story Posted: Dec 01,2016