July 2016

Yole Developpement says that emerging Non-Volatile Memories (NVM) will generate $53 million in sales in 2015, but the market will grow quickly to $4.6 billion 2021. That's a CAGR of 110%!

The market is still limited to niche markets due to the limited densities, but this will change in the near future, and Yole says that the clear go-to market for emerging-NVM will be storage-class memory. High-capacity SCM applications will use either phase-change memory or RRAM memory, while applications that require high endurance and speed will adopt STT-MRAM memories.

Researchers developed a new high-performance bilayer self-selective RRAM device by using HfO2 as a memory swtching layer and mixed ionic and electron conductor as selective layer. The researchers say that this device exhibits high nonlinearity and ultra-low half-select leakage.

This new design may be a way to integrate individual selector devices with memory cell separately in a vertical RRAM device. The researchers successfully demonstrated a four layer vertical crossbar array - with high uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity.