RRAM News - Page 3

Israel-based RRAM developer Weebit Nano announced that it has developed the world's first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector. Weebit says that this is a critical step in the company's commercialization path for the discrete (standalone) memory market (which they hope to achieve by 2024).

The selector is a key element in a memory chip as it enables optimized cell access within the memory array. Weebit developed the technology for the integration together with its development partner CEA-Leti. Weebit says that this technology will broaden its target market beyond embedded memory to include discrete memory technology. In future architectures, the company aims to implement 3D memory stacking and crossbar architectures.

IC designer sureCore announced an agreement with UK-based RRAM developer Intrinsic to bring high-performance embedded RRAM to market. The two companies will deliver commercial memory solutions using sureCore’s patented memory architectures and Intrinsic’s novel RRAM cell.

Using a combination of Intrinsic’s CMOS compatible technology and sureCore’s high-performance, low power memory architectures will enable an accelerated development process and delivery of this new embedded non-volatile memory to be realised.

UK-based RRAM developer Intrinsic Semiconductor Technologies (Intrinsic) announced it closed a $1.85 million seed funding round, led by investors UCL Technology Fund and IP Group plc. The company will use the funds to develop prototypes of its RRAM memory devices on 300 mm silicon wafers in collaboration with imec.

Intrinsic was spun-off from the University College London (UCL) in 2017. The UCL Technology Fund is now supporting this next stage in the company's life.

Israel-based RRAM developer Weebit Nano announced it has raised $12 million AUD in its recent placement. The company says that its new funds will enable it to accelerate its commercialisation initiatives, including strengthening its technology, engineering and sales teams and increasing marketing activities in the embedded memory market. A non-underwritten share purchase plan to raise up to $3 million will be offered to eligible shareholders on the same terms as the Placement.

Weebit says it remains on track to achieve its first commercial agreement by mid-2021. Weebit Nano will also be able to accelerate the next phase of standalone memory development across both the technical and commercial aspects to fast track deployment, whilst also developing the next generation of its neuromorphic demo.

Researchers from the University of Groningen combined graphene with a perovskite ferroelectric material to design a new memristor device.

In the device, a graphene strip was placed on top of a flake of STO (strontium titanium oxide perovskite). The graphene strip addition enabled the usage of the STO material at higher temperatures than before. This research creates new insights into the adoption of STO materials in memristor devices.

Dialog Semiconductor announced that it has has entered into an agreement with GlobalFoundries in which Dialog licenses its Conductive Bridging RAM (CBRAM) technology to GF. Dialog's RRAM technology was pioneered by Adesto Technologies which was recently acquired by Dialog Semiconductor in 2020.

GF will first offer Dialog’s CBRAM as an embedded, non-volatile memory (NVM) option on its 22FDX platform, with the plan to extend to other platforms. Dialog’s proprietary and production proven CBRAM technology is a low power NVM solution designed to enable a range of applications from IoT and 5G connectivity to artificial intelligence (AI).

TSMC is developing RRAM technologies for several years, and the company first hoped to introduce its first embedded RRAM in 2019. This did not happen, but the company says it is now on track for first customer tape-outs in the second half of 2020.

TSMC will offer RRAM on its 40nm and 22nm manufacturing processes.

Australia-based RRAM developer 4DS Memory announced that it has raised a total of $7.6 million AUD ($5.45 million USD) in two financing round.

4DS Memory says that it will use the funds to further develop its Interface Switching ReRAM technology with imec and Western Digital's subsidiary, HGST.

Researchers from Korea's Pohang University of Science & Technology (POSTECH) has designed a halide perovskite material for RRAM memory devices. The perovskite material offers low-operating voltage and high-performance resistive switching memory.

The researcher say they have succeeded in designing an optimal halide perovskite material (CsPb2Br5) that can be applied to a ReRAM device by applying first-principles calculation based on quantum mechanics.

Israel-based RRAM developer Weebit Nano announced it has raised $6.6 million AUD via a two-tranche placement. The funds will be used to complete its memory module development, transfer the technology to a production fab and continue its work on discrete RRAM memory technology.

Weebit says that the placement was priced at a discount of around 22% to its current share price. The company now hopes to accelerate its development work and make up lost time from the COVID-19 shutdown.